Article
Computer Science, Information Systems
Yaxin Wang, Yang Zou, Chao Gao, Xiyu Gu, Ye Ma, Yan Liu, Wenjuan Liu, Jeffrey Bo Woon Soon, Yao Cai, Chengliang Sun
Summary: Film bulk acoustic resonators (FBARs) based on aluminum nitride (AlN) and scandium-doped aluminum nitride (AlScN) show potential in the radio frequency front-end. This study demonstrates the feasibility of adjusting the resonant frequency of FBAR using external direct current electric bias, offering possibilities for frequency-tunable resonators.
Article
Chemistry, Analytical
Laixia Nian, Yang Zou, Chao Gao, Yu Zhou, Yuchen Fan, Jian Wang, Wenjuan Liu, Yan Liu, Jeffrey Bowoon Soon, Yao Cai, Chengliang Sun
Summary: This study investigates the resonant characteristics of FBARs based on AlN/AlScN composite films with different thickness ratios and finds that using Al0.8Sc0.2N composite film can result in a higher effective electromechanical coupling coefficient. The effective electromechanical coupling coefficient can be adjusted within a certain range by changing the thickness ratio of the composite film. Additionally, a filter with a specific sub-band has been successfully designed using AlN/Al0.8Sc0.2N composite film.
Article
Chemistry, Multidisciplinary
Wentong Dou, Congquan Zhou, Ruidong Qin, Yumeng Yang, Huihui Guo, Zhiqiang Mu, Wenjie Yu
Summary: This study designed and fabricated BAW resonators based on highly doped Al1-xScxN piezoelectric film, and conducted detailed testing and analysis on the device. The results showed that the device has potential for high-frequency and large bandwidth applications, with a large electromechanical coupling and reasonable temperature stability.
Article
Computer Science, Information Systems
Qinghua Yang, Yao Xu, Yongle Wu, Weimin Wang, Zhiguo Lai
Summary: This paper designs and fabricates a high-selectivity film bulk acoustic resonator (FBAR) filter chip for the 3.4-3.6 GHz range. The experimental results show that the filter chip has high roll-off and stopband suppression, with most of the stopband suppression better than 35 dB. Error analysis and parameter modification were conducted for future filter design work.
Article
Engineering, Electrical & Electronic
Xinyan Yi, Lishuai Zhao, Peidong Ouyang, Hongbin Liu, Tielin Zhang, Guoqiang Li
Summary: A new two-step growth process integrating MOCVD and PVD technologies was developed to enhance the quality of sputtering AlN films for FBAR filters. The process resulted in higher crystallinity and surface roughness compared to the one-step PVD AlN growth method, leading to improved Q-factor for FBARs. The research demonstrates the importance of optimizing the growth process to achieve high-quality AlN-based FBAR wafers.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Leonardo Lamanna, Francesco Rizzi, Marco Bianco, Matteo Agostini, Marco Cecchini, Massimo De Vittorio, Venkat R. Bhethanabotla
Summary: This study demonstrates the optical photoresponse of AlN-based SAW devices in the IR-Vis-UV range, with a focus on different substrate materials. Variations in out-of-band insertion loss due to the photovoltaic effect were observed, with a mathematical model implemented to explain the electrical admittance change. The study also reveals a frequency downshift in resonances modes under UV light, indicating a potential new UV light detection mode using flexible AlN-based SAW devices.
IEEE SENSORS JOURNAL
(2021)
Article
Chemistry, Analytical
Giovanni Niro, Ilaria Marasco, Francesco Rizzi, Antonella D'Orazio, Marco Grande, Massimo De Vittorio
Summary: Sensing systems are becoming less invasive, and flexible materials offer new opportunities for wearable applications. The use of standard silicon sensors is limited due to their inability to adapt to curved shapes and withstand large deformations. To minimize sensor impacts, wireless transmissions at ultra-high frequencies (UHFs) can be utilized. Thin-film bulk acoustic wave resonators (FBARs) are the most promising choice for climbing radio frequencies in flexible and wearable substrates. This study proposes the design and fabrication of a flexible gravimetric sensor based on FBAR on a polymeric substrate, which shows high electromechanical coupling and avoids the need for membranes, resulting in a faster and cheaper fabrication process and higher robustness. The device exhibits promising mass sensitivity, paving the way for a new generation of wearable MEMS sensors using UHF transmissions.
Article
Engineering, Electrical & Electronic
Merrilyn M. A. Izhar, Merrilyn M. A. Fiagbenu, Pariasadat Musavigharavi, Xingyu Du, Jeff Leathersich, Craig Moe, Abhay A. Kochhar, Eric A. Stach, Ramakrishna H. Vetury, Roy H. Olsson
Summary: This letter presents a K-band bulk acoustic wave (BAW) resonator constructed from an Al0.72Sc0.28 N periodically poled piezoelectric film. The resonators exhibited dominant resonance responses around 20 GHz, approximately four times higher than the resonance frequencies of similar unpoled devices fabricated on the same wafer. Resonators with a quality factor (Q(p)) of 160 and an electromechanical coupling (k(t)(2)) of 8.23% were achieved. The figure of merits (defined as FoM(I) = k(t)(2) Q(p) and FoM(II) = f(p)FoM(I) x 10(-9)) of the resonator are 13.2 and 274 which are higher than most reported acoustic resonators operating at K-band (18 GHz to 27 GHz) or higher frequency. The experimental results suggest that periodically poled BAW resonators are promising for emerging RF filter and oscillator applications at K-band frequencies.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Physics, Applied
Zhiwei Wen, Wenjuan Liu, Tiancheng Luo, Xin Tong, Ying Xie, Xiyu Gu, Yan Liu, Yao Cai, Shishang Guo, Jian Wang, Chengliang Sun
Summary: This letter introduces a new type of laterally excited bulk acoustic resonator (XBAR) called SV-BAR, which suppresses higher-order spurious modes effectively by changing the scattering vias in the electrodes. The SV-BAR achieves 50Ω impedance matching and exhibits impressive performance parameters, making it a promising solution for high-performance radio frequency filters in 5G communication.
APPLIED PHYSICS LETTERS
(2023)
Article
Energy & Fuels
Krishan Kumar, Reena Yadav, Sudhir Husale, Preetam Singh, Davinder Kaur
Summary: In this study, n-MoS2/p-Si and n-MoS2/AlN/p-Si Semiconductor-Insulator-Semiconductor (SIS) heterojunctions based photodetectors were fabricated using dc magnetron sputtering technique. The results showed that the insertion of an ultrathin insulating AlN layer significantly improved the responsivity and response time of the heterojunctions.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Engineering, Electrical & Electronic
J. Arout Vinita, J. Arout Chelvane, Jitendra Singh
Summary: This paper describes the realization of a miniaturized magnetic field sensor that is based on a film bulk acoustic resonator (FBAR). The sensor has a multilayer stack of thin films with a magnetic field sensing layer and a piezoelectric actuation layer, providing enhanced sensitivity and high frequency performance.
SENSORS AND ACTUATORS A-PHYSICAL
(2023)
Article
Engineering, Electrical & Electronic
Yanmei Xue, Changjian Zhou, Xiu Yin Zhang, Mansun Chan
Summary: This study introduces a flexible lateral-field-excited film bulk acoustic resonator using transferred single-crystalline LiTaO3 piezoelectric thin films, demonstrating high-quality resonators with high Q values and temperature stability for different wave modes, suitable for future flexible front-end modules and temperature sensors.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Physics, Applied
Qinwen Xu, Jie Zhou, Yan Liu, Yang Zou, Wenjuan Liu, Yao Cai, Chengliang Sun
Summary: This paper proposes a method of suppressing spurious modes in high-performance Lamb wave devices by reducing the overlap length of electrodes. The use of an AlN/Al0.8Sc0.2N composite film enables a balance between the electromechanical coupling coefficient (k(t)(2)) and Q factor. The study utilizes finite-element analysis and experimental fabrication of Lamb wave resonators with different electrode configurations to verify the effectiveness of spurious mode suppression.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Analytical
Laixia Nian, Yuanhang Qu, Xiyu Gu, Tiancheng Luo, Ying Xie, Min Wei, Yao Cai, Yan Liu, Chengliang Sun
Summary: The piezoelectric constants of AlN, ScAlN, and AlN/ScAlN composites were obtained through first-principles calculation and Mori-Tanaka model. Five types of AlN/ScAlN thin films were prepared on 8-inch silicon substrates, and the film quality was characterized by measuring crystal quality, roughness, and stress distribution. The results showed that the composite film effectively addressed the problem of abnormal grains and reduced roughness. A lamb wave resonator with an AlN/Sc0.2Al0.8N composite was fabricated, which had an effective electromechanical coupling coefficient K-eff(2) of 6.19% and potential for designing high-frequency broadband filters.
Article
Computer Science, Interdisciplinary Applications
Qingwen Li, Xiuping Li, Yuqiang Xie, Zheyan Cao, Jiarui Dong
Summary: This paper proposes a novel multi-mode bulk acoustic wave (BAW) coupled resonator filter (CRF) for wideband applications, utilizing stepped-impedance coupling layers and external inductors to generate multi-mode properties and facilitate resonance frequency calculation. Different filter bandwidth can be achieved by adjusting acoustical length of CRF coupling layers and tuning the materials, leading to a wide range of fractional bandwidth (FBW) from 12.8% to 33%. Simulation results of different models show good consistency in verifying the proposed multi-mode CRF.
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
(2022)
Article
Engineering, Electrical & Electronic
Ying Xiao, Zichao Ma, Clarissa Prawoto, Changjian Zhou, Mansun Chan
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Cristine Jin Estrada, Ying Xiao, Chen Xu, Mansun Chan
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Zichao Ma, Lining Zhang, Changjian Zhou, Mansun Chan
Summary: This research demonstrates the use of unipolar p-type MoS2 field-effect transistors (p-FETs) to improve current drive, with a particular focus on the Pt electrode fabrication method and the performance of the contact interface.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Xuhui Chen, Feilong Ding, Xiaoqing Huang, Xinnan Lin, Runsheng Wang, Mansun Chan, Lining Zhang, Ru Huang
Summary: This research presents a PCM model for robust and efficient simulations of circuits including neuromorphic ones, utilizing the LK equation to develop the PCM hysteresis module and successfully simulating voltage-controlled relaxation oscillation for GST PCM. The technique of DE is developed to reformulate the PCM model without sacrificing accuracy, resulting in a significant enhancement of simulation efficiency. The functional correctness of the PCM device model and the acceleration effect in circuit simulations have been verified.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Cristine Jin Estrada, Zichao Ma, Mansun Chan
Summary: This study presents a complementary FET technology based on MoS2, hBN, and graphene, which demonstrates ideal electrical performance and enables high-performance CMOS inverters.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Clarissa Prawoto, Zichao Ma, Ying Xiao, Salahuddin Raju, Mansun Chan
Summary: The introduction of air-gap technology in global buses effectively reduces delay and power consumption, while meeting mechanical and electrical performance requirements.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Jiye Li, Yuqing Zhang, Jialiang Wang, Huan Yang, Xiaoliang Zhou, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: Investigation of the electrical characteristics of self-aligned top-gate amorphous InGaZnO thin-film transistors reveals high-performance metrics and excellent stability. The transistors exhibit near-ideal subthreshold swing, low off-state current, positive threshold voltage, and decent mobility.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Physical
Zixuan Zhang, Chao Xie, Jiaona Zhang, Mansun Chan, Min Zhang
Summary: Researchers propose a method to modulate stretchable strain sensors by patterning the hybrid film and using pre-stretching transfer. The sensitivity and sensing range of the sensors can be customized by adjusting the pre-stretching level of the substrate, pattern design, and height of the carbon nanotube arrays. The sensors show tunable sensitivity and sensing range, high mechanical repeatability, and durability, making them suitable for applications in movement monitoring, human-machine interfaces, and electronic skins.
Article
Engineering, Electrical & Electronic
Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: Here we present a self-aligned top gate (SATG) coplanar amorphous InGaZnO (a-IGZO) thin film transistor (TFT) technology with a down-scaled gate length (Lg) of 97 nm and a gate insulator (GI) AlOx of 4 nm (equivalent oxide thickness = 2.4 nm). The fabricated TFT exhibits excellent performance, including a large on-current (ION) of 17.9 mu A/mu m, a high on/off current ratio over 10^(9), a positive threshold voltage (V-TH) of 0.07 V, and a minimum drain-induced barrier lowering (DIBL) of 77 mV/V. These results are attributed to the abrupt homojunction at the source-drain sides and the high-quality ultrathin gate insulator of AlOx by atomic layer deposition (ALD). With the compatibility with modern integrated circuit (IC) process, the developed SATG a-IGZO TFT technology is suitable for back-end-of-line (BEOL) and 3D integrations of advanced ICs.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Shun-Qi Dai, Cristine Jin Estrada, An-Nan Xiong, Chen Xu, Jie George Yuan, Mansun Chan
Summary: This article introduces a CMOS-compatible low-power photonic demodulator for ToF CMOS image sensors. The proposed junction-assisted photonic demodulator (JAPD) utilizes electric field applied through two guide electrodes to enhance the collection of optically generated minority carriers, while using a p-n junction to prevent direct majority carrier current. Experimental results demonstrate that the JAPD achieves a low power consumption of 29 fW per pixel and a high modulation contrast (MC) of 98%. Process optimization allows for the complete depletion of the optical window during the demodulation process, significantly improving the frequency response in TCAD simulation.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Cristine Jin Estrada, Zichao Ma, Lining Zhang, Mansun Chan
Summary: In this article, a threshold voltage model for 2-D materials-based FETs is derived using an analytical solution to Poisson's equation at the source region. The effect of fringing fields on the underlapped region is studied and incorporated using conformal mapping. The model highlights the dependence of the turn-on condition on various factors, including the barrier height, device geometry, and gate-to-source overlap length. It is verified with numerical simulations and experimental data.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Shaolin Zhou, Liang Liu, Qinling Deng, Shaowei Liao, Quan Xue, Mansun Chan
Summary: This paper investigates the interlayer coupling effects of multiple parallel-cascaded electromagnetic metasurfaces and utilizes them for scalable broadband spectral regulations. The resonant modes of the cascaded metasurfaces with interlayer couplings are modeled by transmission line lumped equivalent circuits, guiding the design of tunable spectral response. The interlayer gaps and other parameters are leveraged to achieve the desired spectral properties, such as bandwidth scaling and central frequency shift. The numerical and experimental results demonstrate the effectiveness of the cascaded model for broadband spectral tuning.
Article
Nanoscience & Nanotechnology
Yuqing Zhang, Jiye Li, Jinxiong Li, Tengyan Huang, Yuhang Guan, Yuhan Zhang, Huan Yang, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: This paper presents a capacitor-less embedded dynamic random access memory (eDRAM) technology based on oxide semiconductor (OS) transistors and demonstrates a self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) using a simplified three-masks (3M) process. The performance of the TFT is improved by optimizing the gate insulator and interface defects, as well as manipulating the defects in the a-IGZO channel through a rapid thermal anneal. The developed TFTs show high device performance and minimal parasitic capacitances, enabling the realization of a high-performance and high-density monolithic-3D (M3D) integration.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Yanmei Xue, Xiaodong Yang, Changjian Zhou, Xiu Yin Zhang, Mansun Chan
Summary: This study proposes the design and fabrication of lateral-field-excited (LFE) resonators based on 42 degrees Y-cut single-crystal LiTaO3 (LT) on silicon dioxide (SiO2), with excellent performance for potential applications in 5G wireless communication.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2020)
