Article
Physics, Applied
Haotian Xue, Elia Palmese, Renbo Song, Md Istiaque Chowdhury, Nicholas C. Strandwitz, Jonathan J. Wierer Jr
Summary: This article presents the structure and optical characteristics of thin wurtzite AlInN films grown on free-standing, c-plane GaN substrates. The Al1-xInxN layers with varying In content are grown using metalorganic chemical vapor deposition. The optical properties of the pseudomorphic AlInN layers can be measured without the additional variability caused by lattice relaxation, which is crucial for device design. The smooth surfaces of the AlInN films have minimum pit areas when the In content is near lattice-matched to GaN. The refractive index increases and the bandgap energy decreases with increased In content, as shown by spectroscopic ellipsometry.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Optics
Gangyi Zhu, Xin Ji, Zhenfu Zhang, Xingcan Yan, Ying Yang, Feifei Qin, Xin Li, Jiagui Wu, Xiaojuan Sun, Junbo Yang, Yongjin Wang
Summary: This paper examines the relationship between the blueshift of electroluminescence spectra and the deformation of GaN beam structure in micro-nano optomechanical accelerometers, and achieves high sensitivity and a broad acceleration measurement range.
PHOTONICS RESEARCH
(2023)
Article
Chemistry, Multidisciplinary
Takato Fukui, Yoshinobu Matsuda, Makoto Matsukura, Takahiro Kojima, Mitsuru Funato, Yoichi Kawakami
Summary: GaN layers are grown on Al-pretreated ScAlMgO4 substrates using MOVPE without LT buffer layers. The Al pretreatment results in the nucleation of AlN on ScAlMgO4. The GaN MOVPE inverts the polarity from N-polar to metal polar, leading to better crystalline quality compared with conventional LT-buffer technology.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Crystallography
Tadao Hashimoto, Edward R. Letts, Daryl Key
Summary: This paper reviews the near-equilibrium ammonothermal (NEAT) growth of bulk gallium nitride (GaN) crystals, and evaluates the quality of 2 '' GaN substrates and 100 mm bulk GaN crystal grown in a pilot production reactor. Oxygen reduction advancements have led to lower residual oxygen, coloration, and optical absorption in NEAT GaN substrates. X-ray diffraction rocking curve maps confirmed high-quality and uniform microstructure across the entire surface of the crystals and substrates, with a significant reduction in dislocation density during NEAT growth.
Article
Physics, Applied
Michael E. Liao, William L. Olsen, Kenny Huynh, Dorian P. Luccioni, Yekan Wang, XianRong Huang, Michael J. Wojcik, Andrew A. Allerman, Mark S. Goorsky
Summary: Localized lattice distortions in GaN substrates can nucleate epitaxial macro-steps and macro-terraces, leading to optically hazy surfaces. The defects and dislocations in the substrate induce lattice distortions and result in the formation of macro-features such as macro-terraces with lengths ranging from 30 to 150 µm and macro-step heights ranging from 200 to 400 nm. Threading screw dislocations or GaN nanopipes can also cause localized distortion and hillock formation, eventually evolving into macro-terraces and macro-steps. This study highlights the importance of localized lattice tilt from defects in controlling macro-feature formation.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Physics, Applied
Haochen Zhang, Yue Sun, Kang Song, Chong Xing, Lei Yang, Danhao Wang, Huabin Yu, Xueqiang Xiang, Nan Gao, Guangwei Xu, Haiding Sun, Shibing Long
Summary: The study investigates the electrical characteristics of AlGaN/GaN HEMTs on vicinal c-plane sapphire substrates with different misoriented angles, showing enhanced electron mobility and maximum output current as the angle increases. HEMTs on 1.0 degrees and 4.0 degrees substrates exhibit anisotropic electrical behavior with different maximum output currents along different crystallographic directions.
APPLIED PHYSICS LETTERS
(2021)
Article
Optics
Longheng Qi, Xu Zhang, Wing Cheung Chong, Peian Li, Kei May Lau
Summary: This paper describes the fabrication processes of a high-brightness micro-LED display using GaN-on-Si epi-wafers, showcasing high resolution and excellent performance. The Si growth substrate was removed using wet etching, and optical crosstalk was mitigated through design and process modifications.
Article
Optics
Lei Wang, Zixian Wei, Chien-Ju Chen, Lai Wang, H. Y. Fu, Li Zhang, Kai-Chia Chen, Meng-Chyi Wu, Yuhan Dong, Zhibiao Hao, Yi Luo
Summary: This study introduces a blue micro-LED with a nano-structured InGaN wetting layer for high-speed VLC systems, achieving an optical-electrical bandwidth up to 1.3 GHz. Experimental results demonstrate data rates of 2 Gbps and improved 4 Gbps using this micro-LED.
PHOTONICS RESEARCH
(2021)
Article
Engineering, Electrical & Electronic
He Guan, Liyi He, Jingbo Wu, Ziqiang Zeng, Yunshuo Li, Borui Deng, Guiyu Shen, Wentao Li, Yucheng Wang
Summary: A high-resistance Si-based AlInGaN/GaN heterojunction epitaxy with AlN/AlGaN buffer layers and AlInGaN barrier layer was successfully produced in this study, and a novel varistor was proposed based on this material. The varistor consists of a narrow groove etched into the GaN channel and metal electrodes attached to the epitaxy surface. The device exhibited typical varistor characteristics and the opening voltage could be adjusted by altering the groove width.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Review
Chemistry, Physical
Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang, Xinbo Zou
Summary: This article presents a review of recent progress in GaN two-terminal devices grown on lattice-mismatched Si substrates. Advances in material epitaxy, device design, and fabrication technology for GaN diodes are illustrated, along with a comprehensive overview of static and dynamic characteristics for p-i-n diodes. The achievements in cracks-free LED-on-Si and micro-LED display using GaN-on-Si epitaxy are discussed, highlighting the great potential of GaN-based device technology.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Optics
Jiabin Yan, Bolun Jia, Yongjin Wang
Summary: This study presents a novel monolithically integrated voltage-controlled metal-oxide-semiconductor field effect transistor (MOSFET)-LED device with good dimming and switching capabilities, achieved without external metal interconnection. The innovative structure and fabrication process simplify the device structure and production.
Article
Chemistry, Multidisciplinary
Vladislav O. Gridchin, Liliia N. Dvoretckaia, Konstantin P. Kotlyar, Rodion R. Reznik, Alesya Parfeneva, Anna S. Dragunova, Natalia Kryzhanovskaya, Vladimir G. Dubrovskii, George E. Cirlin
Summary: GaN nanowires were successfully grown using selective area epitaxy technique on SiOx/Si substrate, and a temperature-flux ratio map was established to control the growth selectivity. High crystal quality in the GaN nanowires was confirmed through low-temperature photoluminescence measurements.
Article
Chemistry, Multidisciplinary
Lei Liu, Xu Zhang, Shouzhi Wang, Guodong Wang, Jiaoxian Yu, Xiaobo Hu, Qingjun Xu, Xiangang Xu, Lei Zhang
Summary: This study investigates the growth behavior of GaN on porous substrates during the nucleation stage, revealing that the porous structure reduces dislocations and relieves stress. The findings have important reference value for the growth of GaN crystals on porous substrates.
Article
Physics, Applied
Zhenghao Chen, Xuelin Yang, Danshuo Liu, Zidong Cai, Huayang Huang, Liwen Sang, Fujun Xu, Xinqiang Wang, Weikun Ge, Bo Shen
Summary: Controlling the partial pressure of NH3 is crucial for reducing the carbon impurity in GaN drift layers, leading to high mobility GaN vertical power devices. The study shows that the NH3 partial pressure is the key parameter in determining the carbon concentration. By increasing the NH3 partial pressure, the surface N vacancy concentration decreases, resulting in lower carbon incorporation efficiency. This approach effectively lowers the carbon concentration to 1.7 x 10(15)/cm(3) and achieves a record high electron mobility of 1227 cm(2)/Vs at room temperature, paving the way for high performance kV-class GaN vertical power devices on Si substrates.
APPLIED PHYSICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
M. E. A. Samsudin, E. A. Alias, M. Ikram Md Taib, H. Li, M. Iza, S. P. Denbaars, S. Nakamura, N. Zainal
Summary: The performance of GaN-on-GaN LEDs is lower compared to GaN-on-PSS LEDs due to the lack of V-pits formation and carriers localization, resulting in higher operating voltage and lower radiative recombination.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Yulin Zheng, Ben Cao, Xin Tang, Qing Wu, Wenliang Wang, Guoqiang Li
Summary: This study reports on the vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) grown on TMDs / Si substrates, and demonstrates their vdW heterojunctions in the application of high-performance self-powered photodetection. These 1D/2D hybrid systems fully exploit the advantages of strong light absorption of 1D GaN nanoarrays and excellent electrical properties of 2D TMD materials, resulting in a photogenerated current density with a light on/off ratio above 10(5).
Article
Chemistry, Multidisciplinary
Ben Cao, Qianhu Liu, Yulin Zheng, Xin Tang, Jixing Chai, Shufang Ma, Wenliang Wang, Guoqiang Li
Summary: A self-powered photodetector with ultrafast response speed based on a core-shell nanostructure has been proposed, showing great potential for electronic applications. The device exhibits excellent self-powered properties and high current on/off ratio, with an impressive rise/fall time of 22/32 μs. The wafer-scale nano-photodetectors introduce a novel idea for electronic applications.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Optics
Jixing Chai, Liang Chen, Ben Cao, Deqi Kong, Sheng Chen, Tingjun Lin, Wenliang Wang, Yong Liu, Guoqiang Li
Summary: The PDs based on Gr/InGaN heterojunctions exhibit high responsivity and fast response, making them promising for selective detection in visible light communication systems.
Article
Physics, Applied
Sheng Chen, Ben Cao, Wenliang Wang, Xin Tang, Yulin Zheng, Jixing Chai, Deqi Kong, Liang Chen, Shuai Zhang, Guoqiang Li
Summary: In this study, self-powered photodetectors based on the m-GeS2/GaN heterojunction are proposed, and their electronic and optical properties are investigated. The photodetectors exhibit self-powered response, high responsivity and detectivity, and ultrafast response time, demonstrating enormous potential.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Linhao Li, Yuhui Yang, Guojie Chen, Wenliang Wang, Hongsheng Jiang, Haiyan Wang, Chenguang Zhang, Deqi Kong, Jinghong Zhang, Zhengtang Luo, Guoqiang Li
Summary: By combining LT-PLD and HT-MOCVD, high-performance GaN-based UV PDs were designed and prepared, with optimized electrode structure to enhance carrier transport characteristics, resulting in high responsivity and low dark current. These UV PDs have potential applications in UV warning.
Article
Nanoscience & Nanotechnology
Xin Tang, Yulin Zheng, Ben Cao, Qing Wu, Jinghan Liang, Wenliang Wang, Guoqiang Li
Summary: By constructing GaN nanowire/Nb-doped MoS2 flake hybrid heterostructures, photodetectors with high responsivity, fast response speed, and a wide spectral response range can be realized.
ACS APPLIED NANO MATERIALS
(2022)
Article
Physics, Applied
Shanjie Li, Peiye Sun, Zhiheng Xing, Nengtao Wu, Wenliang Wang, Guoqiang Li
Summary: The study investigates the time-dependent degradation of Mg-doped GaN/AlN superlattice HEMTs under different bias conditions and proposes solutions to address V-th instability issues.
APPLIED PHYSICS LETTERS
(2022)
Article
Optics
Sunan Yao, Huaqing Chai, Lei Lei, Zihe Zhu, Guoqiang Li, Wenliang Wang
Summary: This study designs micro-LED arrays with different array numbers for high-speed visible light communication and lighting. The 2 x 2 array micro-LEDs exhibit a high modulation bandwidth of approximately 785 MHz at higher injection current, with a light output power over 7 mW, making them more suitable for visible light communication in free space.
Article
Engineering, Electrical & Electronic
Huaqing Chai, Shunan Yao, Lei Lei, Zihe Zhu, Guoqiang Li, Wenliang Wang
Summary: In this study, parallel micro-light-emitting diode (mu LED) arrays based on via-holes structure were proposed and analyzed. The results show that the bandwidth of the arrays increases with the number of arrays, while the maximum withstand current density decreases. Among all arrays, the 3 x 3 mu LED array has the highest bandwidth and light output power.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Physical
Ben Cao, Shufang Ma, Wenliang Wang, Xin Tang, Dou Wang, Weikang Shen, Bocang Qiu, Bingshe Xu, Guoqiang Li
Summary: This study successfully synthesized Mg-doped p-type MoS2/GaN heterojunctions, in which the Mg doping introduced abundant holes, leading to an inverted internal electric field and high responsivity with fast response time. This provides an efficient preparation strategy for the application of nanoelectronic and nano-optoelectronic devices.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Engineering, Electrical & Electronic
Zihe Zhu, Lei Lei, Tingjun Lin, Linhao Li, Zhengliang Lin, Hongsheng Jiang, Guoqiang Li, Wenliang Wang
Summary: This study proposes embedded N-electrode micro-LEDs (pLEDs) with high modulation bandwidth and stable light output power. The as-prepared pLEDs demonstrate a high modulation bandwidth of 240 MHz and a low light output power aging rate of 6% under high temperature and humidity conditions, due to the embedded electrode structure. This improvement effectively enhances the uniformity of current spreading and increases the injection saturation current density, expanding the -3 dB modulation bandwidth and enhancing the light output power stability of pLEDs in harsh environments.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Review
Materials Science, Multidisciplinary
Youtian Mo, Xi Deng, Peixin Liu, Jiansen Guo, Wenliang Wang, Guoqiang Li
Summary: The design of carbon material-based heterojunction solar cells (HJSCs) offers a promising method to convert and collect solar energy. Versatile carbon materials with unique properties have gained significant attention in the field of photovoltaics (PVs) due to their multiple applications. Efforts have been made to enhance light absorption and charge transporting ability to achieve high-performance HJSCs. This review discusses the basic application and principles of carbon materials in PVs and highlights optimization methods for carbon nanotube (CNT)-based HJSCs, including film modification and interface engineering. The potential applications of flexible carbon material-based HJSCs are also explored.
MATERIALS SCIENCE & ENGINEERING R-REPORTS
(2023)
Article
Nanoscience & Nanotechnology
Jixing Chai, Qianhu Liu, Liang Chen, Ben Cao, Deqi Kong, Tingjun Lin, Wenliang Wang, Guoqiang Li
Summary: An ultrafast photodetector based on axial InN/InGaN nanorod array heterojunction is prepared, exhibiting fast response speed and short response time. Further analysis shows high responsivity and specific detectivity, indicating potential application in ultrafast photoelectric conversion systems.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Zhengliang Lin, Tingting Lin, Tingjun Lin, Xin Tang, Guojie Chen, Jiaying Xiao, Haiyan Wang, Wenliang Wang, Guoqiang Li
Summary: Self-powered ultraviolet photodetectors based on GaN have been proposed with a GaS thin film grown on n-type GaN to form a GaN/GaS heterojunction. The GaN/GaS-based photodetector exhibits excellent photosensitivity, detectivity, ultrafast response speed, rejection ratio, and rectification ratio. This work provides a feasible method to synthesize high-performance GaN/GaS heterojunctions and demonstrates their enormous potential in ultrafast response self-powered UV photodetection.
APPLIED PHYSICS LETTERS
(2023)
Review
Materials Science, Multidisciplinary
Deqi Kong, Yin Zhou, Jixing Chai, Sheng Chen, Liang Chen, Linhao Li, Tingjun Lin, Wenliang Wang, Guoqiang Li
Summary: This review highlights the importance of visible light photodetectors (PDs) in improving the communication rate and quality of visible light communication systems. It summarizes the current research and advancements in the field, as well as outlines future perspectives.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Mengjiao Dong, Liyun Liao, Chensheng Li, Yingxiao Mu, Yanping Huo, Zhong-Min Su, Fushun Liang
Summary: This study investigates the influence of the polarity of polymer matrices on persistent room-temperature phosphorescence (pRTP). It is discovered that intense phosphorescence emission can be achieved in highly polar matrices such as polyacrylic acid (PAA). The dipole-dipole interaction between the polar fluorophore and polar matrix is proposed to stabilize the excited state and facilitate the generation of efficient room-temperature phosphorescence emissions.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Han-Jiang Yang, Weijia Xiang, Xiangzhou Zhang, Jin-Yun Wang, Liang-Jin Xu, Zhong-Ning Chen
Summary: This article reports a 2D copper(I)-based cluster material for X-ray imaging, which exhibits ultra-high spatial resolution, high photoluminescence efficiency, and low detection limit. The material shows excellent linear response to X-ray dose rates and light output, and has the best spatial resolution among reported lead-free metal halide hybrids.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Review
Materials Science, Multidisciplinary
Taek Joon Kim, Sang-hun Lee, Dayeong Kwon, Jinsoo Joo
Summary: Donor-acceptor heterostructures using organic-inorganic halide perovskites, two-dimensional transition metal dichalcogenides, pi-conjugated organic small/macro molecules, and quantum dots are promising platforms for exciton-based photonics and optoelectronics. Hetero-interlayer excitons and hetero-intermolecular excitons formed through optical and/or electrical charge transfer in various heterostructures are important quasi-particles for light emission, detection, and harvesting systems.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Liemao Cao, Xiaohui Deng, Zhen-kun Tang, Rui Tan, Yee Sin Ang
Summary: We investigate the interface properties between WSi2N4 and Mo2B, O-modified Mo2B, and OH-modified Mo2B nanosheets. We find that WSi2N4 and Mo2B form n-type Schottky contacts, while functionalizing Mo2B with O and OH leads to the formation of both n-type and p-type ohmic contacts with WSi2N4. Additionally, we demonstrate the emergence of quasi-ohmic contact with ultralow lateral Schottky barrier and zero vertical interfacial tunneling barriers in Mo2B(OH)2-contacted WSi2N4.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Ga Eun Kim, Hae-Jin Kim, Heesuk Jung, Minwoo Park
Summary: This study presents a solution to the commercialization challenges of flexible LEDs based on MAPbBr(3) by incorporating polyurethane and an In-Ga-Zn-Sn liquid alloy. The designed devices showed high flexibility, efficiency, and durability, with improved electron injection and reduced defects, making them promising for next-generation displays.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Tao Shen, Zeng Wu, Zhen Jiang, Dongsheng Yan, Yan Zhao, Yang Wang, Yunqi Liu
Summary: Sidechain engineering is an important molecular design strategy for tuning the solid-state packing and structural ordering of conjugated polymers. The effects of sidechain direction on the optoelectronic properties of polymers and device performance were systematically investigated in this study. The results demonstrate that tuning the sidechain substitution direction can effectively improve the molecular structure and light absorption properties of polymers, providing new insights for the rational design of functional polymers.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Lotte Clinckemalie, Bapi Pradhan, Roel Vanden Brande, Heng Zhang, Jonathan Vandenwijngaerden, Rafikul Ali Saha, Giacomo Romolini, Li Sun, Dirk Vandenbroucke, Mischa Bonn, Hai I. Wang, Elke Debroye
Summary: In this study, a facile strategy using a non-conductive polymer was proposed to fabricate stable, pinhole-free thick films. The effect of introducing a second phase into CsPbBr3 perovskite crystals on their photophysical properties and charge transport was investigated. The dual phase devices exhibited improved stability and more effective operation at higher voltages in X-ray detection.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Jingye Zou, Shenglan Hao, Pascale Gemeiner, Nicolas Guiblin, Omar Ibder, Brahim Dkhil, Charles Paillard
Summary: When rare-earth ions are embedded in a ferroelectric material, their photoluminescence can serve as an all-optical probe for temperature, electric field, and mechanical stimulus. However, the impact of ferroelectric phase transitions on photoluminescence is not well understood. In this study, we demonstrate changes in the photoluminescence of green emission bands during critical ferroelectric transitions in an Er-doped BaTiO3 material. We also find that the intensity ratio and wavelength position difference of sub-peaks provide information on the phase transitions.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Jiangchao Han, Daming Zhou, Wei Yang, Chen Lv, Xinhe Wang, Guodong Wei, Weisheng Zhao, Xiaoyang Lin, Shengbo Sang
Summary: Rare type-II spin-gapless semiconductors (SGSs) have attracted increasing attention due to their unique spin properties. In this study, the interface contacts and spin transport properties of different devices composed of VSi2P4 ferromagnetic layers were investigated. The results show that VSi2P4 is a promising material for designing vertical van der Waals heterostructures with a giant tunnel magnetoresistance (TMR) in spintronic applications.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Tianqi Zhao, Renagul Abdurahman, Qianting Yang, Ruxiangul Aiwaili, Xue-Bo Yin
Summary: In this study, we designed and prepared Cr and Ba-doped gamma-Ga2O3 nanoparticles to achieve near-infrared emission and enhance the emission intensity. The emission mechanism was proposed based on the trap depth, band gap, and energy levels of Cr ions. The ratiometric temperature sensing and encryption information transfer demonstrated the potential applications of this technology.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Shuvankar Gupta, Jyotirmoy Sau, Manoranjan Kumar, Chandan Mazumdar
Summary: In this study, a new spin-gapless semiconductor material CoFeMnSn is reported, and its stable structure and spin-polarized band structure are determined through experimental realization and theoretical calculations. The compound exhibits a high ferromagnetic transition temperature, making it excellent for room temperature applications. The nearly temperature-independent resistivity, conductivity, and carrier concentration of the compound, adherence to the Slater-Pauling rule, and the high intrinsic anomalous Hall conductivity achieved through hole doping further confirm its spin-gapless semiconductor nature. Additionally, the compound's SGS and topological properties make it suitable for spintronics and magneto-electronics devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Ikumi Aratani, Yoji Horii, Yoshinori Kotani, Hitoshi Osawa, Hajime Tanida, Toshiaki Ina, Takeshi Watanabe, Yohko F. Yano, Akane Mizoguchi, Daisuke Takajo, Takashi Kajiwara
Summary: In this study, two-dimensional arrays of single-molecule magnets (SMMs) based on metal-organic frameworks (MOFs) were systematically modified through Langmuir-Blodgett methods and chemical modifications. The introduction of bulky alkoxide groups induced structural changes and perpendicular magnetic anisotropy. This research provides a promising strategy for the construction of high-density magnetic memory devices using molecular spintronics.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Zonghao Lei, Houhe Dong, Lijie Sun, Bing Teng, Yanfei Zou, Degao Zhong
Summary: Researchers have successfully developed four different up-conversion phosphors based on the Eulytite-type host Ba3Yb(PO4)(3). The optical temperature sensing properties of these phosphors were thoroughly investigated, and it was found that Ba3Yb(PO4)(3):Tm/Er/Ho showed potential for optical temperature measurement applications.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
C. Roncero-Barrero, M. A. Carvajal, J. Ribas-Arino, I. de P. R. Moreira, M. Deumal
Summary: This study computationally investigates the conductivity of four isostructural compounds with different Se contents, and reveals the parameters that define their conductivity in stable organic radical materials. The results provide insights into the influence of Se content on the conductivity and highlight the importance of considering multiple parameters in understanding the trends in conductivity.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)
Article
Materials Science, Multidisciplinary
Remi Arras, Kedar Sharma, Lionel Calmels
Summary: In this study, we investigated the interplay between structural defects in NiFe2O4, showing that the complex formed by a Ni-Oh/Fe-Td-cation swap and a neutral oxygen vacancy is more stable than these two isolated defects, and significantly reduces the width of the minority-spin band gap.
JOURNAL OF MATERIALS CHEMISTRY C
(2024)