Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature
出版年份 2014 全文链接
标题
Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 105, Issue 16, Pages 163505
出版商
AIP Publishing
发表日期
2014-10-22
DOI
10.1063/1.4899144
参考文献
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