期刊
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 60, 期 3, 页码 307-310出版社
KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.60.307
关键词
ZnO film; Hydrogen; Ion irradiation; Hall mobility; Electronic structure
资金
- Dankook University
RF-sputtered ZnO films were irradiated with hydrogen ions by using an ion accelerator at 110 keV. The physical and the electrical characteristics of the irradiated ZnO films were studied as functions of the hydrogen-ion irradiation dose. The Hall measurement indicated that the carrier concentration had small changes regardless of irradiated hydrogen amount, but the mobility was dramatically enhanced after irradiation of 10(15) atoms/cm(2). Even when the irradiated hydrogen dose was increased, the crystalline structure had no transformation and the composition was preserved. On the other hand, the electronic structure, measured by using X-ray absorption spectroscopy, exhibited a modification of the molecular orbital structure in the ZnO films irradiated at doses above 10(15) atoms/cm(2). These distortions of the molecular orbital in the conduction band could lead to a mobility enhancement without a structural transformation.
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