Article
Chemistry, Analytical
Xingzhen Yan, Bo Li, Kaian Song, Yiqiang Zhang, Yanjie Wang, Fan Yang, Chao Wang, Yaodan Chi, Xiaotian Yang
Summary: The use of sol-gel technology to prepare thin-film transistors (TFTs) with InGaZnO (IGZO) channels offers the advantages of simple process and weak substrate selectivity. The field-effect performance of TFT devices with circular drain/source electrodes was found to be superior to those with traditional rectangular electrodes, due to the more uniform distribution of potential in the circular electrode structure.
Article
Crystallography
Shinyoung Park, Sangwook Youn, Jun Tae Jang, Hyungjin Kim, Dae Hwan Kim
Summary: This paper discusses the correlation between SiO2 deposition thickness and hydrogen content, and analyzes the effect of the SiO2 layer on the properties of synaptic IGZO TFTs. The results show that the SiO2 layer improves the memory window and retention characteristics, and provides guidance for optimizing the hydrogen content.
Article
Engineering, Electrical & Electronic
Yining Yu, Nannan Lv, Dongli Zhang, Yiran Wei, Mingxiang Wang
Summary: The letter discusses how the carrier mobility of amorphous InGaZnO thin-film transistors was enhanced by introducing nitrogen and forming Zn3N2, with a saturation field-effect mobility of 61.6 cm(2)/Vs. However, annealing at 400 degrees C led to a decrease in mobility to 4.1 cm(2)/Vs due to the formation of defective ZnxNy. Additionally, the enhanced mobility of a-IGZO TFTs did not exhibit persistent photoconductivity behavior, making them suitable for functional circuits in active-matrix displays.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Physical
Md Mehedi Hasan, Samiran Roy, Eisuke Tokumitsu, Hye-Yong Chu, Sung Chul Kim, Jin Jang
Summary: By employing one-step annealing, we successfully induced ferroelectricity in spray coated ZrO2 with sputtered amorphous InGaZnO (a-IGZO) capping layer, achieving a large memory window of 1.5 V, high I-ON/I-OFF ratio of 1 x 10(7), and steep subthreshold swing (SS) of 0.12 V/decade. The low thermal expansion coefficient of a-IGZO helped induce the polar orthorhombic phase in the underlying ZrO2 layer by providing suitable mechanical stress. This work provides a new approach for inducing ferroelectricity in ZrO2 for high performance ferroelectric thin film transistors.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Nahid Sultan Al-Mamun, Md Abu Jafar Rasel, Douglas E. Wolfe, Aman Haque, Ryan Schoell, Khalid Hattar, Seung Ho Ryu, Seong Keun Kim
Summary: This study investigates the mitigation of radiation damage on p-type SnO thin-film transistors (TFTs) through a fast, room-temperature annealing process. Atomic layer deposition is used to fabricate high-quality p-type SnO layers in the bottom-gate TFTs. After irradiation, the device performance degrades significantly due to increased surface roughness and defect density. However, a new technique using electron wind force shows promising results in quickly recovering the device performance.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Chemistry, Physical
Wengao Pan, Yunping Wang, Yanxin Wang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Xinwei Wang, Shengdong Zhang, Lei Lu
Summary: In this work, the multiple effects of hydrogen (H) doping on amorphous InGaZnO (IGZO) TFTs were investigated. The H content influenced the electrical performances of the TFTs, acting as a defect suppressor, donor defect, transition state, and finally an acceptor defect. The oxygen vacancy (Vo) in IGZO determined the diffusion channel of the H dopant and its concentration. Additionally, fluorine (F) doping improved the hydrogen resistibility of IGZO.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Engineering, Electrical & Electronic
Ankit Verma, Praveen Kumar Sahu, Vivek Chaudhary, Arun Kumar Singh, V. N. Mishra, Rajiv Prakash
Summary: In this work, an efficient ammonia gas sensor based on a polymer/2D material nanocomposite was fabricated and characterized. The sensor exhibited promising sensing performance with a limit of detection of 904 ppb and a sensing response of 63.45% at 100 ppm ammonia concentration. The fabricated sensor has potential applications in high-performance ammonia sensing.
IEEE SENSORS JOURNAL
(2022)
Article
Nanoscience & Nanotechnology
Byeongwan Kim, Hyunkyung Lee, Seungyeon Hong, Hyo Jung Kim, Kanghyun Kim, Haeyong Kang
Summary: This study examined the influence of aluminum electrodes on low-temperature solution-processed InGaZnO thin film transistors, revealing enhanced electron density, abnormal negative shift in threshold voltage, and improvements after low-temperature post-annealing and polymer passivation.
Article
Materials Science, Multidisciplinary
Deliang Zhu, Zongjin Jiang, Wenhou Zhang, Dongbo Yin, Wangying Xu, Shun Han, Ming Fang, Wenjun Liu, Peijiang Cao, Youming Lu
Summary: By preparing ZnO:H thin films in Ar + H-2 atmosphere, introducing hydrogen as a defect passivator and a shallow donor, the performance of ZnO:H thin-film transistors was greatly enhanced, with improvements in saturation mobility, on/off ratio, threshold voltage, and bias stability. This simple and effective method has great potential for flexible electronics applications.
MATERIALS CHEMISTRY AND PHYSICS
(2021)
Article
Biochemistry & Molecular Biology
T. Hirabayashi, S. Yasuhara, S. Shoji, A. Yamaguchi, H. Abe, S. Ueda, H. Zhu, T. Kondo, M. Miyauchi
Summary: In this study, hydrogen boride films are fabricated by ion-exchange treatment on MgB2 films, introducing hydrogen species and forming B-H bonds within the films. The efficiency of hydrogen introduction is influenced by the type of ion-exchange treatment, with formic acid treatment showing higher efficiency. These ion-exchanged films exhibit photoinduced hydrogen release, suggesting potential applications in further studies and device development.
Article
Engineering, Electrical & Electronic
Ya-Ting Chien, Kuan-Ju Zhou, Mao-Chou Tai, Yu-An Chen, Pei-Jun Sun, Ya-Huan Lee, Ting-Chang Chang, Tsung-Ming Tsai, Yang-Shun Fan, Chen-Shuo Huang, Kuo-Kuang Chen, Chih-Hung Tsai
Summary: The effect of hydrogen diffusion on dual-gate InGaZnO thin-film transistors with bilayer bottom gate insulator (BGI) was investigated. It was found that hydrogen diffuses from the first deposited GI to the second one, forming a weak chemical bond at the GI-active layer interface. Under positive gate bias temperature stress (PBTS), the weakly bonded hydrogen breaks, causing defects that induce electron trapping and increase the threshold voltage. As the temperature increases, more broken bonds and trapped electrons are observed at the interface. A charge trapping model and data fitting were used to extract and compare the film quality parameter. The degradation trend between threshold voltage, bond breaking, and defect generation was examined.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Materials Science, Multidisciplinary
Xiaofen Xu, Gang He, Leini Wang, Wenhao Wang, Shanshan Jiang, Zebo Fang
Summary: This work presents a solution-processed high-performance graphene quantum dots decorated amorphous InGaZnO thin-film transistor. Experimental results demonstrate the superior performance and stability of the device, as well as its potential application in logic circuits.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Multidisciplinary Sciences
Bin Jia, Chao Zhang, Min Liu, Zhen Li, Jian Wang, Li Zhong, Chuanyu Han, Ming Qin, Xiaodong Huang
Summary: A full integration of miniaturized transparent energy, electronic, and sensing devices using InGaZnO greatly enhances the functions of transparent electronics. Each device, including a transparent lithium-ion battery, a thin-film transistor, and a photodetector, demonstrates acceptable performance. The devices also show collaborative capabilities to achieve systematic functions, such as charging the battery with alternating-current signals using the thin-film transistor as a rectifier and using the charged battery as on-chip power for the photodetector.
NATURE COMMUNICATIONS
(2023)
Article
Chemistry, Physical
T. Marimuthu, R. Yuvakkumar, P. Senthil Kumar, G. Ravi, Xueqing Xu, Dhayalan Velauthapillai, Dai Viet N. Vo
Summary: Electrolysis of seawater for hydrogen production is an attractive approach for renewable energy technologies. In this study, Cu2S electrocatalyst was fabricated on Ni foam using a low temperature hydrothermal growth method. The Cu2S catalyst grown for 1 hour exhibited low overpotentials and superior electrocatalytic behavior for hydrogen evolution reaction in both deionized water and seawater. The results suggest that the cost-effective and low temperature fabrication of Cu2S electrocatalyst holds great potential for large-scale seawater splitting.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2022)
Article
Materials Science, Multidisciplinary
Jinbaek Bae, Arqum Ali, Jin Jang
Summary: Spray-pyrolyzed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) with self-aligned (SA) coplanar structure exhibits excellent performance and stability, making it a promising metal oxide semiconductor for high-performance TFT backplanes.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Nanoscience & Nanotechnology
Kyung-Chul Ok, Jun-Hyung Lim, Hyun-Jun Jeong, Hyun-Mo Lee, You Seung Rim, Jin-Seong Park
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Chemistry, Physical
Su Jin Lee, Yi Rang Lim, Seulgi Ji, Seong Ku Kim, Yeoheung Yoon, Wooseok Song, Sung Myung, Jongsun Lim, Ki-Seok An, Jin-Seong Park, Sun Sook Lee
Article
Materials Science, Ceramics
Seung-Hwan Lee, Jin-Myung Choi, Jae-Hong Lim, Jozeph Park, Jin-Seong Park
CERAMICS INTERNATIONAL
(2018)
Article
Materials Science, Ceramics
Hyun-Jun Jeong, Dong-Hyun Kim, Jozeph Park, Jin-Seong Park
CERAMICS INTERNATIONAL
(2018)
Article
Materials Science, Multidisciplinary
Jung-Dae Kwon, Johwa Yang, Jin-Seong Park, Dong-Won Kang
Article
Materials Science, Multidisciplinary
Hyun-Jun Jeong, Hyun-Mo Lee, Kyung-Chul Ok, Jozeph Park, Jin-Seong Park
JOURNAL OF MATERIALS CHEMISTRY C
(2018)
Article
Chemistry, Physical
Ji-Won Jung, Dong-Won Choi, Chan Kyu Lee, Ki Ro Yoon, Sunmoon Yu, Jun Young Cheong, Chanhoon Kim, Su-Ho Cho, Jin-Seong Park, Yong Joon Park, Il-Doo Kim
Article
Chemistry, Multidisciplinary
Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong-won Choi, Jin-Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin
Article
Nanoscience & Nanotechnology
Jung-Hoon Lee, Mi Yoo, DongHee Kang, Hyun-Mo Lee, Wan-ho Choi, Jung Woo Park, Yeonjin Yi, Hyun You Kim, Jin-Seong Park
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Nanoscience & Nanotechnology
Hyun-Mo Lee, Hyun-Jun Jeong, Kyung-Chul Ok, You Seung Rim, Jin-Seong Park
ACS APPLIED MATERIALS & INTERFACES
(2018)
Article
Chemistry, Physical
Seunghwan Lee, GeonHo Baek, Jung-Hoon Lee, Dong-Won Choi, Bonggeun Shong, Jin-Seong Park
APPLIED SURFACE SCIENCE
(2018)
Article
Materials Science, Multidisciplinary
Ji Soo Roh, Jin-Seong Park, Jong Min Roh, Ho Bum Park, Si-Hyun Do
MATERIALS CHEMISTRY AND PHYSICS
(2018)
Article
Polymer Science
Eunmi Cho, Mac Kim, Jin-Seong Park, Sang-Jin Lee
Article
Physics, Condensed Matter
Jiazhen Sheng, Ki-Lim Han, TaeHyun Hong, Wan-Ho Choi, Jin-Seong Park
JOURNAL OF SEMICONDUCTORS
(2018)
Article
Materials Science, Multidisciplinary
Jin-seong Park, Ho Jong Lee, Sung Jin Kim
KOREAN JOURNAL OF MATERIALS RESEARCH
(2018)
