Scanning moiré fringe imaging for quantitative strain mapping in semiconductor devices

The reduction of the substitutional C content in annealed Si/SiGeC superlattices studied by dark-field electron holography

(2011) T Denneulin et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Dark-field electron holography for the measurement of geometric phase

(2011) M.J. Hÿtch et al.   ULTRAMICROSCOPY

Strain evolution during the silicidation of nanometer-scale SiGe semiconductor devices studied by dark field electron holography

(2010) David Cooper et al.   APPLIED PHYSICS LETTERS

New opportunities for SiGe and Ge channel p-FETs

(2010) S.W. Bedell et al.   MICROELECTRONIC ENGINEERING

Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution

(2010) David Cooper et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

(2009) Florian Hüe et al.   APPLIED PHYSICS LETTERS

Dark field electron holography for quantitative strain measurements with nanometer-scale spatial resolution

(2009) David Cooper et al.   APPLIED PHYSICS LETTERS

Scanning moiré fringe imaging by scanning transmission electron microscopy

(2009) Dong Su et al.   ULTRAMICROSCOPY

Nanoscale holographic interferometry for strain measurements in electronic devices

(2008) Martin Hÿtch et al.   NATURE