Insertion of a Si layer to reduce operation current for resistive random access memory applications
出版年份 2013 全文链接
标题
Insertion of a Si layer to reduce operation current for resistive random access memory applications
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 25, Pages 252902
出版商
AIP Publishing
发表日期
2013-06-25
DOI
10.1063/1.4812304
参考文献
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