Sub-$\hbox{100-}\mu\hbox{A}$ Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

出版年份 2008 全文链接

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作者

关键词

出版物

IEEE TRANSACTIONS ON ELECTRON DEVICES

Volume 55, Issue 5, Pages 1185-1191

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2008-04-29

DOI

10.1109/ted.2008.919385

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IEEE TRANSACTIONS ON ELECTRON DEVICES

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