Operation Voltage Control in Complementary Resistive Switches Using Heterodevice

Multibit Operation of $\hbox{TiO}_{x}$ -Based ReRAM by Schottky Barrier Height Engineering

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

(2010) Shimeng Yu et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

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Oxide Nanoelectronics on Demand

(2009) C. Cen et al.   SCIENCE