Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN

Nonpolar/Semipolar GaN Technology for Violet, Blue, and Green Laser Diodes

(2011) Hiroaki Ohta et al.   MRS BULLETIN

Nonpolar and Semipolar Group III Nitride-Based Materials

(2011) J. S. Speck et al.   MRS BULLETIN

Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding

(2009) Kathryn M. Kelchner et al.   Applied Physics Express

Blue-Green InGaN/GaN Laser Diodes on Miscutm-Plane GaN Substrate

(2009) You-Da Lin et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers

(2009) You-Da Lin et al.   APPLIED PHYSICS LETTERS

Characterization of blue-green m-plane InGaN light emitting diodes

(2009) You-Da Lin et al.   APPLIED PHYSICS LETTERS

Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm

(2009) Kuniyoshi Okamoto et al.   APPLIED PHYSICS LETTERS

Blue Laser Diodes Fabricated onm-Plane GaN Substrates

(2008) Yuhzoh Tsuda et al.   Applied Physics Express

High-Efficiency Continuous-Wave Operation of Blue-Green Laser Diodes Based on Nonpolarm-Plane Gallium Nitride

(2008) Kuniyoshi Okamoto et al.   Applied Physics Express