High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes

Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes

(2011) Stuart E. Brinkley et al.   APPLIED PHYSICS LETTERS

Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells

(2011) L. Schade et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

(2010) Yuji Zhao et al.   Applied Physics Express

High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

(2010) You-Da Lin et al.   Applied Physics Express

High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates

(2010) James W. Raring et al.   Applied Physics Express

Highly Polarized Green Light Emitting Diode inm-Axis GaInN/GaN

(2010) Shi You et al.   Applied Physics Express

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

(2010) Shuichiro Yamamoto et al.   Applied Physics Express

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2010) Takashi Kyono et al.   Applied Physics Express

Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN

(2010) Feng Wu et al.   APPLIED PHYSICS LETTERS

Optimization of Device Structures for Bright Blue Semipolar (10\bar1\bar1) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition

(2010) Yuji Zhao et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electroluminescence Characterization of (20\bar21) InGaN/GaN Light Emitting Diodes with Various Wavelengths

(2010) Roy B. Chung et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Polarization switching of the optical gain in semipolar InGaN quantum wells

(2010) W. G. Scheibenzuber et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Correlation between Optical Polarization and Luminescence Morphology of (11\bar22)-Oriented InGaN/GaN Quantum-Well Structures

(2009) Hisashi Masui et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (11\bar22) InGaN Multiple Quantum Well Laser Diode Structures

(2008) Anurag Tyagi et al.   Applied Physics Express

Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯0) and (101¯1¯) planes

(2008) Hisashi Masui et al.   APPLIED PHYSICS LETTERS

Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes

(2008) Masashi Kubota et al.   APPLIED PHYSICS LETTERS

Optical polarization ofm-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope

(2008) Hisashi Masui et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

(2008) M. Ueda et al.   PHYSICAL REVIEW B