4.5 Article

High quality p-type Ag-doped ZnO thin films achieved under elevated growth temperatures

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JOURNAL OF PHYSICS-CONDENSED MATTER
卷 24, 期 14, 页码 -

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IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/24/14/145802

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资金

  1. National Science Foundation [NSF-0846504]
  2. Texas A&M Graduate Diversity Fellowship

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By correlating the effects of substrate temperature, oxygen pressure and laser energy on the electrical and microstructural properties of Ag-doped ZnO films grown on a sapphire (0001) substrate, p-type conductivity is achieved under various substrate temperatures in the wide range of 250-750 degrees C. All of the samples were deposited by pulsed-laser deposition under various designed conditions. Hall measurements indicate that the best conductivity is achieved in Ag-ZnO films under a substrate temperature of 500 degrees C, a partial oxygen pressure of 250-300 mTorr and laser energy between 330 and 345 mJ. The hole-carrier concentration is 2: 29 x 10(18) cm(-3), the resistivity is 0.9 Omega cm and the mobility is 3.03 cm(2) V-1 s(-1). Transmission-electron microscopy (TEM) studies on the p-type films reveal similar microstructural properties to one another, but different properties to that of the n-type films deposited at the same temperatures with different deposition parameters.

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