Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films

标题
Effects of Ti top electrode thickness on the resistive switching behaviors of rf-sputtered ZrO2 memory films
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 95, Issue 11, Pages 112904
出版商
AIP Publishing
发表日期
2009-09-18
DOI
10.1063/1.3231872

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