Article
Engineering, Electrical & Electronic
Jun Gyu Lee, Woo Je Jung, Jae Hyeon Park, Keon-Ho Yoo, Tae Whan Kim
Summary: The tapered channel effect in 3-D NAND technology leads to differences in electrical characteristics between upper and lower cells, such as threshold voltage. Simulation results using Sentaurus technology and TCAD tools suggest that employing a tapered blocking oxide layer with a proper taper angle can reduce the non-uniformity of threshold voltage shift between cells. These findings are beneficial for designing reliable 3-D NAND flash memories.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Chemistry, Multidisciplinary
Chuanfang Yan, Yuting Wan, Hongping Long, Huang Luo, Xuan Liu, Hang Luo, Sheng Chen
Summary: In this study, a p-type semiconductive polymer PMHT is added to PEI to create physical cross-linked networks and electron-hole pairs, resulting in improved breakdown strength and reduced energy loss. Moreover, the dielectric constant of PEI is enhanced by the PMHT filler. The findings demonstrate the potential of combining cross-linking and electron-hole pairs for high-performance polymer dielectrics.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Matchima Buddhanoy, Preeti Kumari, Umeshwarnath Surendranathan, Maryla Wasiolek, Khalid Hattar, Biswajit Ray
Summary: This article evaluates the data retention characteristics of irradiated multilevel-cell NAND flash memories and proposes two strategies to improve their performance.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2022)
Article
Materials Science, Multidisciplinary
Anthony Calzolaro, Nadine Szabo, Andreas Grosser, Jan Gaertner, Thomas Mikolajick, Andre Wachowiak
Summary: Preconditioning with O-2 plasma and postmetallization annealing with N-2 can effectively reduce trap states and improve interface quality at the Al2O3/GaN interface, leading to enhanced threshold voltage stability in AlGaN/GaN MIS-HEMTs.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Minsoo Kim, Hyungcheol Shin
Summary: This study presents a comprehensive analysis of fast electron detrapping from BE-TOX in 3-D NAND flash memories and develops a physics-based detrapping model. By comparing the model result with a fitted function, several indicators of retention characteristics are correlated with the major paths of charge loss. The model facilitates the quantitative separation of the detrapping mechanism into different paths.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Huanhuan Ma, Lei Wang, Lingyun Wan, Jielan Li, Xinming Qn, Jie Liu, Wei Hu, Lin Lin, Chao Yang, Jinlong Yang
Summary: The study presents a low-rank approximation method to accelerate non-self-consistent GW calculations, utilizing ISDF decomposition and Cauchy's integral to construct low-rank representations and reduce computational cost and memory usage. Two methods for selecting interpolation points, including QRCP procedure and K-means clustering algorithm, achieve similar accuracy at lower computational cost, with K-means clustering significantly reducing the computational cost by an order of magnitude compared to QRCP.
JOURNAL OF PHYSICAL CHEMISTRY A
(2021)
Article
Engineering, Electrical & Electronic
Hyungjun Jo, Sangmin Ahn, Hyungcheol Shin
Summary: In this study, the Z-interference in 3-D CTN NAND flash memory is investigated using TCAD simulation. The research reveals that Z-interference is caused by the programming of neighbor word lines and results in a shift in the threshold voltage of the victim word line. The study also explores the program state dependency and the effect of different channel materials on Z-interference.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Multidisciplinary
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, T. N. Kopylova, K. M. Degtyarenko
Summary: Experimental studies were conducted on the admittance of MIS structures based on pentacene with different back contacts and insulator materials. The concentration of holes in the pentacene film was found to be high, with minimal hysteresis for structures with Ag and In back contacts. The equivalent circuit of the pentacene-based MIS structure was proposed to analyze impedance frequency dependences under various conditions, with maxima in the temperature dependences of conductivity for structures with Au and Ag back contacts.
RUSSIAN PHYSICS JOURNAL
(2021)
Proceedings Paper
Computer Science, Hardware & Architecture
Gong Xiao
Summary: This talk presents the recent research progress on HfO2-based ferroelectric memories and monolithic 3D integration enabled by oxide semiconductor transistors for future integrated circuits. The talk covers the motivation, various doped-HfO2 ferroelectric materials, two types of ferroelectric memories (FeFET and FTJ), in-memory computing using these memories, 3D monolithic integration, and adoption challenges.
2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)
(2022)
