期刊
APPLIED PHYSICS LETTERS
卷 95, 期 8, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3216578
关键词
Auger effect; electron-hole recombination; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; wide band gap semiconductors
资金
- Ministry of Knowledge Economy
- Korea Evaluation Institute of Industrial Technology (KEIT) [10032099] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate equation model. By using the peak point of the efficiency versus current-density relation as the parameters of the rate equation analysis, internal quantum efficiency and each recombination current at arbitrary current density can be unambiguously determined without any knowledge of A, B, and C coefficients. The theoretical analysis is compared with measured efficiency of a LED sample and good agreement between the model and experiment is found. The investigation of recombination coefficients shows that Auger recombination alone is not sufficient to explain the efficiency droop of InGaN LEDs.
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