期刊
APPLIED PHYSICS LETTERS
卷 95, 期 20, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3266520
关键词
Auger effect; electron-hole recombination; gallium compounds; III-V semiconductors; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors
资金
- Department of Energy [DEFC2607NT43229]
The Auger recombination coefficient in In0.1Ga0.9N/GaN quantum wells, emitting at 407 nm has been determined from large signal modulation measurements on lasers in which these quantum wells form the gain region. A value of 1.5x10(-30) cm(6) s(-1) is determined for the Auger coefficient at room temperature, which is used to analyze the reported efficiency characteristics of 410 nm In0.1Ga0.9N/GaN quantum wells light emitting diodes. The calculated efficiencies agree remarkably well with the measured ones. It is apparent that Auger recombination is largely responsible for limiting device efficiencies at high injection currents.
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