Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

High-Speed Spatial Atomic-Layer Deposition of Aluminum Oxide Layers for Solar Cell Passivation

(2010) Paul Poodt et al.   ADVANCED MATERIALS

Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide

(2009) Pierre Saint-Cast et al.   APPLIED PHYSICS LETTERS

Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide

(2009) Tsu-Tsung Li et al.   Physica Status Solidi-Rapid Research Letters

Effective surface passivation of crystalline silicon using ultrathin Al2O3films and Al2O3/SiNxstacks

(2009) Jan Schmidt et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by ultrathin Al2O3films synthesized by thermal and plasma atomic layer deposition

(2009) G. Dingemans et al.   Physica Status Solidi-Rapid Research Letters

Silicon surface passivation by atomic layer deposited Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

(2008) B. Hoex et al.   JOURNAL OF APPLIED PHYSICS