Heterogeneous Integration of Compound Semiconductors

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Bulk GaN Ion Cleaving

(2010) O. Moutanabbir et al.   JOURNAL OF ELECTRONIC MATERIALS

Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN

(2010) O. Moutanabbir et al.   PHYSICAL REVIEW B

Micro Strip Line-Based On-Chip Terahertz Integrated Devices for High Sensitivity Biosensors

(2009) Shintaro Kasai et al.   Applied Physics Express

Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon

(2009) Peng Chen et al.   APPLIED PHYSICS LETTERS

InGaN/GaN multiple quantum well solar cells with long operating wavelengths

(2009) R. Dahal et al.   APPLIED PHYSICS LETTERS

Blister formation in ion-implanted GaAs: Role of diffusivity

(2009) R. R. Collino et al.   APPLIED PHYSICS LETTERS

Reduction of phonon resonant terahertz wave absorption in photoconductive switches using epitaxial layer transfer

(2009) S. Kasai et al.   APPLIED PHYSICS LETTERS

Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting

(2009) O. Moutanabbir et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Photonic integration: Si or InP substrates?

(2009) D. Liang et al.   ELECTRONICS LETTERS

Photonic guiding structures in lithium niobate crystals produced by energetic ion beams

(2009) Feng Chen   JOURNAL OF APPLIED PHYSICS

Mechanisms of ion-induced GaN thin layer splitting

(2009) O. Moutanabbir et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Ultrathin membranes in x-cut lithium niobate

(2009) Frank Schrempel et al.   OPTICS LETTERS

Facile synthesis of highly stablea-Siby ion implantation of low-keV H isotopes

(2009) O. Moutanabbir et al.   PHYSICAL REVIEW B

Atomic Scale Structure of (001) Hydrogen-Induced Platelets in Germanium

(2009) Marie-Laure David et al.   PHYSICAL REVIEW LETTERS

Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects

(2009) Leonid Tsybeskov et al.   PROCEEDINGS OF THE IEEE

MATERIALS SCIENCE: Is Silicon's Reign Nearing Its End?

(2009) R. F. Service   SCIENCE

Printed Assemblies of Inorganic Light-Emitting Diodes for Deformable and Semitransparent Displays

(2009) S.-I. Park et al.   SCIENCE

Blistering kinetics of GaN by hydrogen implantation at high temperature

(2009) H.J. Woo et al.   SURFACE & COATINGS TECHNOLOGY

Blistering/exfoliation kinetics of GaAs by hydrogen and helium implantations

(2009) H.J. Woo et al.   SURFACE & COATINGS TECHNOLOGY

Evidence for ion irradiation induced dissociation and reconstruction of Si–H bonds in hydrogen-implanted silicon

(2008) Z. F. Di et al.   APPLIED PHYSICS LETTERS

Microstructural evolution in H ion induced splitting of freestanding GaN

(2008) O. Moutanabbir et al.   APPLIED PHYSICS LETTERS

Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication

(2008) Donghun Choi et al.   APPLIED PHYSICS LETTERS

Effects of hydrogen implantation temperature on InP surface blistering

(2008) Peng Chen et al.   APPLIED PHYSICS LETTERS

Thermal evolution of defects produced by implantation of H, D and He in Silicon

(2008) P.J. Simpson et al.   APPLIED SURFACE SCIENCE

Fabrication of Transfer-Enhanced Semiconductor Substrates by Wafer Bonding and Hydrogen Exfoliation Techniques

(2008) Monali B. Joshi et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Heteroepitaxial growth of GaAs on (100) Ge/Si using migration enhanced epitaxy

(2008) H. Tanoto et al.   JOURNAL OF APPLIED PHYSICS

Electrical detection of biomaterials using AlGaN/GaN high electron mobility transistors

(2008) B. S. Kang et al.   JOURNAL OF APPLIED PHYSICS

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

(2008) D. Liang et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Preparation of 3 inch freestanding GaN substrates by hydride vapor phase epitaxy with void-assisted separation

(2008) T. Yoshida et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE