Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication

标题
Molecular-beam epitaxial growth of III–V semiconductors on Ge∕Si for metal-oxide-semiconductor device fabrication
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 92, Issue 20, Pages 203502
出版商
AIP Publishing
发表日期
2008-05-20
DOI
10.1063/1.2929386

向作者/读者发起求助以获取更多资源

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now