Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting

标题
Stress Adjustment and Bonding of H-Implanted 2 in. Freestanding GaN Wafer: The Concept of Double-Sided Splitting
作者
关键词
-
出版物
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 4, Pages H105
出版商
The Electrochemical Society
发表日期
2009-02-13
DOI
10.1149/1.3066081

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