A robust, ultra low-power, data-dependent-power-supplied 11T SRAM cell with expanded read/write stabilities for internet-of-things applications
出版年份 2018 全文链接
标题
A robust, ultra low-power, data-dependent-power-supplied 11T SRAM cell with expanded read/write stabilities for internet-of-things applications
作者
关键词
-
出版物
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING
Volume -, Issue -, Pages -
出版商
Springer Nature America, Inc
发表日期
2018-08-12
DOI
10.1007/s10470-018-1286-2
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology
- (2017) Hao Cai et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- A robust 12T SRAM cell with improved write margin for ultra-low power applications in 40 nm CMOS
- (2017) Jaeyoung Kim et al. INTEGRATION-THE VLSI JOURNAL
- Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory
- (2017) Sayeed Ahmad et al. MICROELECTRONICS JOURNAL
- Variation Tolerant Differential 8T SRAM Cell for Ultralow Power Applications
- (2016) Soumitra Pal et al. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS
- 9-T SRAM Cell for Reliable Ultralow-Power Applications and Solving Multibit Soft-Error Issue
- (2016) Soumitra Pal et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- A Single-Ended With Dynamic Feedback Control 8T Subthreshold SRAM Cell
- (2016) C. B. Kushwah et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- Single-Ended Schmitt-Trigger-Based Robust Low-Power SRAM Cell
- (2016) Sayeed Ahmad et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- Single-Ended Boost-Less (SE-BL) 7T Process Tolerant SRAM Design in Sub-threshold Regime for Ultra-Low-Power Applications
- (2015) C. B. Kushwah et al. CIRCUITS SYSTEMS AND SIGNAL PROCESSING
- An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques
- (2015) Majid Moghaddam et al. CIRCUITS SYSTEMS AND SIGNAL PROCESSING
- A design of low swing and multi threshold voltage based low power 12T SRAM cell
- (2015) P. Upadhyay et al. COMPUTERS & ELECTRICAL ENGINEERING
- Design of an Ultra-low Voltage 9T SRAM With Equalized Bitline Leakage and CAM-Assisted Energy Efficiency Improvement
- (2015) Bo Wang et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Wireless Sensor Networks for Condition Monitoring in the Railway Industry: A Survey
- (2015) Victoria J. Hodge et al. IEEE TRANSACTIONS ON INTELLIGENT TRANSPORTATION SYSTEMS
- A 256-kb 9T Near-Threshold SRAM With 1k Cells per Bitline and Enhanced Write and Read Operations
- (2015) Ghasem Pasandi et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- SRAM devices and circuits optimization toward energy efficiency in multi-Vth CMOS
- (2015) Bo Wang et al. MICROELECTRONICS JOURNAL
- 40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist
- (2014) Yi-Wei Chiu et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- A Subthreshold Symmetric SRAM Cell With High Read Stability
- (2014) Roghayeh Saeidi et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
- Single-ended, robust 8T SRAM cell for low-voltage operation
- (2013) Liang Wen et al. MICROELECTRONICS JOURNAL
- A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing
- (2012) Ming-Hsien Tu et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation
- (2011) Cheng-Hung Lo et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Ultralow-Voltage Process-Variation-Tolerant Schmitt-Trigger-Based SRAM Design
- (2011) Jaydeep P. Kulkarni et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- Efficient Design of Micro-Scale Energy Harvesting Systems
- (2011) Chao Lu et al. IEEE Journal on Emerging and Selected Topics in Circuits and Systems
- A Differential Data-Aware Power-Supplied (D$^{2}$AP) 8T SRAM Cell With Expanded Write/Read Stabilities for Lower VDDmin Applications
- (2010) Meng-Fan Chang et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- A 130 mV SRAM With Expanded Write and Read Margins for Subthreshold Applications
- (2010) Meng-Fan Chang et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist
- (2010) Ming-Hsien Tu et al. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Understanding DC Behavior of Subthreshold CMOS Logic Through Closed-Form Analysis
- (2010) Massimo Alioto IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- A 32 kb 10T Sub-Threshold SRAM Array With Bit-Interleaving and Differential Read Scheme in 90 nm CMOS
- (2009) Ik Joon Chang et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- A 256 kb 65 nm 8T Subthreshold SRAM Employing Sense-Amplifier Redundancy
- (2008) Naveen Verma et al. IEEE JOURNAL OF SOLID-STATE CIRCUITS
- Suppressing random dopant-induced fluctuations of threshold voltages in semiconductor devices
- (2008) Petru Andrei et al. JOURNAL OF APPLIED PHYSICS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started