Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory

标题
Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory
作者
关键词
Memory, Static Random Access Memory (SRAM), Variability, Static Noise Margin, Single Ended, Low Power
出版物
MICROELECTRONICS JOURNAL
Volume 62, Issue -, Pages 1-11
出版商
Elsevier BV
发表日期
2017-02-07
DOI
10.1016/j.mejo.2017.01.011

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