A 32 kb 10T Sub-Threshold SRAM Array With Bit-Interleaving and Differential Read Scheme in 90 nm CMOS

标题
A 32 kb 10T Sub-Threshold SRAM Array With Bit-Interleaving and Differential Read Scheme in 90 nm CMOS
作者
关键词
-
出版物
IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 44, Issue 2, Pages 650-658
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2009-01-30
DOI
10.1109/jssc.2008.2011972

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