P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation

出版年份 2011 全文链接

标题

P-P-N Based 10T SRAM Cell for Low-Leakage and Resilient Subthreshold Operation

作者

关键词

-

出版物

IEEE JOURNAL OF SOLID-STATE CIRCUITS

Volume 46, Issue 3, Pages 695-704

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2011-02-01

DOI

10.1109/jssc.2010.2102571

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