Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
出版年份 2018 全文链接
标题
Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 123, Issue 4, Pages 044502
出版商
AIP Publishing
发表日期
2018-01-25
DOI
10.1063/1.5006145
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Metal–insulator transitions in (V1-xCrx)2O3 thin films deposited by reactive direct current magnetron co-sputtering
- (2016) Madec Querré et al. THIN SOLID FILMS
- Multidimensional Simulation of Threshold Switching in NbO2Based on an Electric Field Triggered Thermal Runaway Model
- (2016) Carsten Funck et al. Advanced Electronic Materials
- Resistive Switching in Mott Insulators and Correlated Systems
- (2015) Etienne Janod et al. ADVANCED FUNCTIONAL MATERIALS
- Electrical Switching in Thin Film Structures Based on Transition Metal Oxides
- (2015) A. Pergament et al. Advances in Condensed Matter Physics
- Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
- (2014) Abhishek A. Sharma et al. ADVANCED FUNCTIONAL MATERIALS
- Atomic Layer Deposition of Transparent VOxThin Films for Resistive Switching Applications
- (2014) Trilok Singh et al. CHEMICAL VAPOR DEPOSITION
- Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators
- (2013) Pablo Stoliar et al. ADVANCED MATERIALS
- Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications
- (2013) Jiyong Woo et al. APPLIED PHYSICS LETTERS
- Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM
- (2013) Florian Lentz et al. IEEE ELECTRON DEVICE LETTERS
- Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells
- (2013) Bogdan Govoreanu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Electrical and optical characterization of the metal-insulator transition temperature in Cr-doped VO2 thin films
- (2013) B. L. Brown et al. JOURNAL OF APPLIED PHYSICS
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications
- (2011) Myungwoo Son et al. IEEE ELECTRON DEVICE LETTERS
- Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn
- (2010) Mark C. Biesinger et al. APPLIED SURFACE SCIENCE
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Observation of electric field-assisted phase transition in thin film vanadium oxide in a metal-oxide-semiconductor device geometry
- (2008) Changhyun Ko et al. APPLIED PHYSICS LETTERS
- Multiple Avalanches across the Metal-Insulator Transition of Vanadium Oxide Nanoscaled Junctions
- (2008) Amos Sharoni et al. PHYSICAL REVIEW LETTERS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExploreAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now