Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells

标题
Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 60, Issue 8, Pages 2471-2478
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-06-19
DOI
10.1109/ted.2013.2266357

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