Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells

First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism

(2012) S. Clima et al.   APPLIED PHYSICS LETTERS

Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling

(2012) Stefano Larentis et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

(2011) Erwin Hildebrandt et al.   APPLIED PHYSICS LETTERS

Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Thermal Properties of Ultrathin Hafnium Oxide Gate Dielectric Films

(2009) M.A. Panzer et al.   IEEE ELECTRON DEVICE LETTERS

Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior

(2009) Dmitri B. Strukov et al.   Small

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance

(2008) K. Kinoshita et al.   APPLIED PHYSICS LETTERS