Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
出版年份 2014 全文链接
标题
Electronic Instabilities Leading to Electroformation of Binary Metal Oxide-based Resistive Switches
作者
关键词
-
出版物
ADVANCED FUNCTIONAL MATERIALS
Volume 24, Issue 35, Pages 5522-5529
出版商
Wiley
发表日期
2014-07-10
DOI
10.1002/adfm.201400461
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Mechanism of localized electrical conduction at the onset of electroforming in TiO2 based resistive switching devices
- (2014) Mohammad Noman et al. APPLIED PHYSICS LETTERS
- Transient characterization of the electroforming process in TiO2 based resistive switching devices
- (2013) Mohammad Noman et al. APPLIED PHYSICS LETTERS
- A study of copper oxide based resistive switching memory by conductive atom force microscope
- (2013) Qianfei Zhou et al. APPLIED SURFACE SCIENCE
- Formation and Characterization of Filamentary Current Paths in $\hbox{HfO}_{2}$-Based Resistive Switching Structures
- (2012) F. Palumbo et al. IEEE ELECTRON DEVICE LETTERS
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Forming mechanism of the bipolar resistance switching in double-layer memristive nanodevices
- (2012) S B Lee et al. NANOTECHNOLOGY
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Time-dependent current-voltage curves during the forming process in unipolar resistance switching
- (2011) S. B. Lee et al. APPLIED PHYSICS LETTERS
- Current-controlled negative differential resistance due to Joule heating in TiO2
- (2011) A. S. Alexandrov et al. APPLIED PHYSICS LETTERS
- Metal oxide resistive memory switching mechanism based on conductive filament properties
- (2011) G. Bersuker et al. JOURNAL OF APPLIED PHYSICS
- Thermographic analysis of localized conductive channels in bipolar resistive switching devices
- (2011) Yi Meng Lu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Direct Identification of the Conducting Channels in a Functioning Memristive Device
- (2010) John Paul Strachan et al. ADVANCED MATERIALS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems
- (2010) L. Goux et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Resistance transition in metal oxides induced by electronic threshold switching
- (2009) D. Ielmini et al. APPLIED PHYSICS LETTERS
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Direct observation of conducting filaments on resistive switching of NiO thin films
- (2008) J. Y. Son et al. APPLIED PHYSICS LETTERS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
- MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?
- (2008) G. I. Meijer SCIENCE
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