Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

Analysis of Transient Currents During Ultrafast Switching of $\hbox{TiO}_{2}$ Nanocrossbar Devices

(2011) C. Hermes et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

(2011) Myungwoo Son et al.   IEEE ELECTRON DEVICE LETTERS

Bipolar Nonlinear $\hbox{Ni/TiO}_{2}\hbox{/}\hbox{Ni}$ Selector for 1S1R Crossbar Array Applications

(2011) Jiun-Jia Huang et al.   IEEE ELECTRON DEVICE LETTERS

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

(2010) Joonmyoung Lee et al.   APPLIED PHYSICS LETTERS

Effects of the compliance current on the resistive switching behavior of TiO2 thin films

(2009) X. Cao et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES