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Two- and Three-Terminal Resistive Switches: Nanometer-Scale Memristors and Memistors

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Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts

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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

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Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

(2010) June Sik Kwak et al.   APPLIED PHYSICS LETTERS

Integrated Complementary Resistive Switches for Passive High-Density Nanocrossbar Arrays

(2010) R. Rosezin et al.   IEEE ELECTRON DEVICE LETTERS

Self-Aligned Memristor Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step

(2010) Qiangfei Xia et al.   NANO LETTERS

Resistive Switching Multistate Nonvolatile Memory Effects in a Single Cobalt Oxide Nanowire

(2010) Kazuki Nagashima et al.   NANO LETTERS

Read/write schemes analysis for novel complementary resistive switches in passive crossbar memory arrays

(2010) Shimeng Yu et al.   NANOTECHNOLOGY

Complementary resistive switches for passive nanocrossbar memories

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(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

TiN electrode-induced bipolar resistive switching of TiO2 thin films

(2009) Young Ho Do et al.   CURRENT APPLIED PHYSICS

A hybrid nanomemristor/transistor logic circuit capable of self-programming

(2009) Julien Borghetti et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

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Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology