Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
出版年份 2017 全文链接
标题
Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor
作者
关键词
-
出版物
Nature Communications
Volume 8, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-10-11
DOI
10.1038/s41467-017-01128-9
参考文献
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