Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions

标题
Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2 p–n heterojunctions
作者
关键词
-
出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 40, Pages 27750-27753
出版商
Royal Society of Chemistry (RSC)
发表日期
2016-09-05
DOI
10.1039/c6cp04752a

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