Top-Gate Low-Threshold Voltage $p\hbox{-}\hbox{Cu}_{2} \hbox{O}$ Thin-Film Transistor Grown on $\hbox{SiO}_{2}/ \hbox{Si}$ Substrate Using a High-$\kappa$ HfON Gate Dielectric

标题
Top-Gate Low-Threshold Voltage $p\hbox{-}\hbox{Cu}_{2} \hbox{O}$ Thin-Film Transistor Grown on $\hbox{SiO}_{2}/ \hbox{Si}$ Substrate Using a High-$\kappa$ HfON Gate Dielectric
作者
关键词
-
出版物
IEEE ELECTRON DEVICE LETTERS
Volume 31, Issue 8, Pages 827-829
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2010-06-25
DOI
10.1109/led.2010.2050576

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