Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study

First-Principles Study of Electronic Structure And Physical Properties of MIIIN Semiconductors

(2022) Haibin Wang et al.   Russian Journal of Physical Chemistry B

Effect of the Method for Producing the ZnO–In2O3 Composite on its Sensor Activity in Hydrogen Detection

(2022) V. F. Gromov et al.   Russian Journal of Physical Chemistry B

Bismides ternary alloys GaSb1−xBix: Structural, optoelectronic, and thermodynamic properties under pressure

(2022) M. Khelil et al.   JOURNAL OF MATERIALS RESEARCH

Study of the Adsorption Antioxidant Compound Malva on the BNNT(9,9-9): An Investigation based on DFT Method

(2022) Shamsa Sharifi et al.   Russian Journal of Physical Chemistry B

Density functional theory study of quaternary InPBiN alloys lattice matched to InP substrate: Structural, electronic and optical properties

(2022) Ramzi. Alaya et al.   OPTIK

First-principles investigation on narrow bandgap InSb1−Bi dilute bismide alloys for highly efficient long-wavelength infrared optoelectronics

(2022) Imane Zerifi et al.   INFRARED PHYSICS & TECHNOLOGY

The localized effect of the Bi level on the valence band in the dilute bismuth GaBi x As 1-x alloy

(2018) Chuan-Zhen Zhao et al.   SUPERLATTICES AND MICROSTRUCTURES

Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys

(2017) O. Delorme et al.   JOURNAL OF CRYSTAL GROWTH

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

(2017) Lijuan Wang et al.   Crystals

Ab initio predictions of structure preferences and band gap character in ordered AlAs1−xBix alloys

(2016) R. Alaya et al.   CURRENT APPLIED PHYSICS

Estimation of Bi induced changes in the direct E0 band gap of III–V-Bi alloys and comparison with experimental data

(2016) D.P. Samajdar et al.   PHYSICA B-CONDENSED MATTER

The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy

(2014) T. D. Das   JOURNAL OF APPLIED PHYSICS

Structural, thermodynamic and electronic properties of GaPxSb1–xand InPxSb1–xalloys

(2013) Dongguo Chen et al.   Emerging Materials Research

Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy

(2012) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

First-principles calculation of the physical properties of GaAs1-xBixalloys

(2011) M Mbarki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Ab initio electronic band structure calculation of InP in the wurtzite phase

(2011) Luis C.O. Dacal et al.   SOLID STATE COMMUNICATIONS

Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy

(2010) Z Chine et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

FP-APW+lo calculations of the elastic properties in zinc-blende III-P compounds under pressure effects

(2009) A. Bouhemadou et al.   COMPUTATIONAL MATERIALS SCIENCE

First-principles calculations on the origins of the gap bowing in InAs1–xPx alloys

(2009) A. Breidi et al.   PHYSICA B-CONDENSED MATTER

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS

High pressure induced phase transition in sulfur doped indium phosphide: An angular-dispersive X-ray diffraction and Raman study

(2008) Chih-Ming Lin et al.   SOLID STATE COMMUNICATIONS