期刊
SOLID STATE COMMUNICATIONS
卷 149, 期 3-4, 页码 136-141出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2008.10.038
关键词
Sulfur doped indium phosphide; High pressure; Angular-dispersive X-ray diffraction
资金
- National Science Council of Taiwan [NSC 97-2112-M-134-001-MY2, NSC 97-2120-M-001-007, NSC 96-2112-M-214-001]
The high pressure induced phase transitions in sulfur doped indium phosphide (InP:S) at ambient temperature has been investigated using angular-dispersive X-ray diffraction (ADXRD) and Raman scattering under high pressure up to around 44.6 and 37.4 GPa, respectively. In situ ADXRD measurements found that the transition of InP:S to a rock-salt phase began at 10.4 GPa and completed at 13.3 GPa with a 15.7% volume decrease. Another transition to the orthorhombic structure with space group Cmcm (the Cmcm phase) was found to occur at 35.8 GPa with a 4.1% volume decrease. The fitting of volume compression data to the third-order Birch-Murnaghan equation of state yielded that the zero-pressure isothermal bulk moduli (B-0) and the first-pressure derivatives (B'(0)) were 74 GPa and 3.9 for the zinc-blende phase, respectively. The rock-salt to Cmcm phase transition pressure increases relative to that of undoped InP of 32 GPa, which may be attributable to the increase of the ionicity of InP:S by S doping favorable to the ionic rock salt structure. In situ Raman measurements have similar findings. (C) 2008 Elsevier Ltd. All rights reserved.
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