期刊
JOURNAL OF CRYSTAL GROWTH
卷 477, 期 -, 页码 144-148出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2017.03.048
关键词
Molecular beam epitaxy; GaSbBi; Semiconducting III-V materials; X-ray diffraction
资金
- ANR under BIOMAN [ANR-15-CE24-0001]
- French Investment for the Future program (EquipEx EXTRA) [ANR-11-EQPX-0016]
- Agence Nationale de la Recherche (ANR) [ANR-15-CE24-0001] Funding Source: Agence Nationale de la Recherche (ANR)
The epitaxial growth, structural and optical properties of GaSb1-xBix layers are reported. The incorporation of Bi into GaSb is varied in the 0 < x <= 14% range by varying the growth temperature and V:III BEP ratio. The Bi content and the structural properties were determined by Rutherford backscattering and X-ray diffraction, respectively. The optical properties have been studied by photoluminescence (PL) spectroscopy. The surface morphology was observed by optical and atomic force microscopies. The samples show a smooth, droplet free surface up to 11.4% Bi incorporation. All samples exhibit room temperature PL up to a wavelength of 3.8 mu m achieved for 14% Bi incorporation. Finally, these alloys have shown a great thermal stability after several annealing at 450 degrees C. This work thus presents the highest Bi-content GaSbBi alloys and the first demonstration of room-temperature PL emission from GaSbBi alloys. (C) 2017 Elsevier B.V. All rights reserved.
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