Single event burnout failures caused in silicon and silicon carbide power devices by single alpha particles emitted from radioactive nuclides

A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons

(2022) M. Pocaterra et al.   MICROELECTRONICS RELIABILITY

Characterization of the carriers' multiplication in Si and SiC power devices by soft-gamma irradiation under cryostatic conditions

(2022) M. Pocaterra et al.   MICROELECTRONICS RELIABILITY

TCAD investigation of the transport of carriers deposited by alpha particles in silicon carbide power Schottky devices

(2021) Marco Pocaterra et al.   MICROELECTRONICS RELIABILITY

Experimental setup to monitor non-destructive single events triggered by ionizing radiation in power devices

(2020) Marco Pocaterra et al.   MICROELECTRONICS RELIABILITY

Gate Damages Induced in SiC Power MOSFETs During Heavy-Ion Irradiation—Part I

(2019) C. Abbate et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

(2019) D. R. Ball et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Single-Event Burnout Mechanisms in SiC Power MOSFETs

(2018) Arthur F. Witulski et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE

Ensuring the reliability of power electronic devices with regard to terrestrial cosmic radiation

(2016) Gerald Soelkner   MICROELECTRONICS RELIABILITY

SRIM – The stopping and range of ions in matter (2010)

(2010) James F. Ziegler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Measurements of impact ionization coefficients of electrons and holes in 4H-SiC and their application to device simulation

(2009) Tetsuo Hatakeyama   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE