A unified model for TCAD simulation of the charge generated in semiconductors by low-energy alpha particles and protons

TCAD simulation of the generation and transport of ionization tracks produced in semiconductors by ions is very relevant for device reliability, as well for the design of radiation detectors. This paper presents a unified model calibrated and validated for the charge generated along the ionization track of low-energy alpha particles and protons in Si, SiC, Ge, GaAs, and GaN. The new model presents several advantages over the traditional ones, in particular the ease of calibration, the numerical stability, and capability to be extended to other ion types.

Automated summary

This paper presents a unified model that has been calibrated and validated for the generation and transport of ionization tracks produced by ions in semiconductors. The new model offers several advantages, including ease of calibration, numerical stability, and the ability to be extended to other ion types.