Suppression of Drain Current Leakage and Short-Channel Effect in Lateral Ga2O3 RF MOSFETs Using (Al x Ga1-x )2O3 Back-Barrier

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

(2023) Chinmoy Nath Saha et al.   APPLIED PHYSICS LETTERS

High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel

(2023) Xinxin Yu et al.   IEEE ELECTRON DEVICE LETTERS

Crystallinity degradation and defect development in (AlxGa1−x)2O3 thin films with increased Al composition

(2023) Takumi Ohtsuki et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Ultra-wide bandgap semiconductor Ga2O3 power diodes

(2022) Jincheng Zhang et al.   Nature Communications

β-Ga2O3 MESFETs with insulating Mg-doped buffer grown by plasma-assisted molecular beam epitaxy

(2022) Ashok V. Dheenan et al.   APPLIED PHYSICS LETTERS

Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications

(2022) Peng Cui et al.   Scientific Reports

Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency

(2021) Abhishek Vaidya et al.   IEEE ELECTRON DEVICE LETTERS

Band offsets at metalorganic chemical vapor deposited β-(AlxGa1−x)2O3/β-Ga2O3 interfaces—Crystalline orientation dependence

(2021) A F M Anhar Uddin Bhuiyan et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Theoretical investigation of optical intersubband transitions and infrared photodetection in β-(AlxGa1 − x)2O3/Ga2O3 quantum well structures

(2020) Joseph E. Lyman et al.   JOURNAL OF APPLIED PHYSICS

Vertical β-Ga₂O₃ Power Transistors: A Review

(2020) Man Hoi Wong et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Delay-time analysis in radio-frequency β-Ga2O3 field effect transistors

(2020) Takafumi Kamimura et al.   APPLIED PHYSICS LETTERS

Progression of Group-III Sesquioxides: Epitaxy, Solubility and Desorption

(2020) Anna Hassa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

$\beta$ -Ga2O3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

(2019) Zhanbo Xia et al.   IEEE ELECTRON DEVICE LETTERS

Lateral β-Ga2O3 field effect transistors

(2019) Kelson D Chabak et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

(2018) Man Hoi Wong et al.   APPLIED PHYSICS LETTERS

Structural and electronic properties of Ga2O3-Al2O3 alloys

(2018) Hartwin Peelaers et al.   APPLIED PHYSICS LETTERS

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

(2017) Andrew Joseph Green et al.   IEEE ELECTRON DEVICE LETTERS

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction

(2016) Yuichi Oshima et al.   Applied Physics Express

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Valence band ordering in β-Ga2O3studied by polarized transmittance and reflectance spectroscopy

(2015) Takeyoshi Onuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Effect of Fringing Capacitances on the RF Performance of GaN HEMTs With T-Gates

(2014) Bo Song et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

(2012) Masataka Higashiwaki et al.   APPLIED PHYSICS LETTERS

InAlN/GaN HEMTs With AlGaN Back Barriers

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS