期刊
IEEE ELECTRON DEVICE LETTERS
卷 32, 期 11, 页码 1525-1527出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2011.2164613
关键词
Back barrier; current gain cutoff frequency (f(T)); GaN; high-electron-mobility transistor (HEMT); InAlN; InGaN; short-channel effect (SCE)
资金
- Defense Advanced Research Projects Agency
- National Science Foundation
- Office of Naval Research
- Samsung
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [846628] Funding Source: National Science Foundation
This letter reports lattice-matched In0.17Al0.83N/GaN high-electron-mobility transistors on a SiC substrate with a record current gain cutoff frequency (f(T)) of 300 GHz. To suppress the short-channel effects (SCEs), an In0.15Ga0.85N back barrier is applied in an InAlN/GaN heterostructure for the first time. The GaN channel thickness is also scaled to 26 nm, which allows a good immunity to SCEs for gate lengths down to 70 nm even with a relatively thick top barrier (9.4-10.4 nm). In a 30-nm-gate-length device with an on-resistance (R-on) of 1.2 Omega . mm and an extrinsic transconductance (g(m.ext)) of 530 mS/mm, a peak fT of 300 GHz is achieved. An electron velocity of 1.37-1.45 x 10(7) cm/s is extracted by two different delay analysis methods.
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