Article
Chemistry, Multidisciplinary
Junlei Qi, Yongping Dai, Chen Ma, Chengxuan Ke, Wenbin Wang, Zongxiao Wu, Xiang Wang, Kai Bao, Yue Xu, Haoxin Huang, Lingzhi Wang, Jingkun Wu, Guangfu Luo, Ye Chen, Zhaoyang Lin, Qiyuan He
Summary: A surfactant-free liquid-phase synthesis method for high-quality 2D tellurium has been developed, and a unique growth mechanism based on atomic escape and guided 2D growth in the liquid phase has been proposed. The as-grown 2D tellurium nanosheets exhibit excellent properties and show potential for various applications.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Sikandar Aftab, Muhammad Arslan Shehzad, Hafiz Muhammad Salman Ajmal, Fahmid Kabir, Muhammad Zahir Iqbal, Abdullah A. Al-Kahtani
Summary: Researchers have discovered mechanical distortion-induced bulk photovoltaic behavior in MoTe2 material, caused by phase transition and broken inversion symmetry. A large bulk photovoltaic response is anticipated in the absence of an external electric field, which has the potential to improve the efficiency of converting light energy.
Article
Chemistry, Physical
Brahim Marfoua, Jisang Hong
Summary: The electric field-dependent properties of the 2H-MoTe2/1T-VSe2 heterostructure were investigated, revealing an increase in the Curie temperature and switching of AHC and ANC under electric field. This finding may have important implications for energy conversion and spintronic devices.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2022)
Article
Chemistry, Physical
Yongjae Cho, Hyunmin Cho, Sungjae Hong, Donghee Kang, Yeonjin Yi, Cheolmin Park, Ji Hoon Park, Seongil Im
Summary: This study investigates two dimensional p-MoTe2 channel-based nonvolatile memory transistors with ferroelectric P(VDF-TrFE) polymer using a bottom-gate device architecture, which significantly reduces switching and drain voltages to minimize power consumption. By employing special processing methods and a bottom-gate structure, low-power memory transistors were successfully fabricated.
Article
Computer Science, Information Systems
Guillermo Vinuesa, Hector Garcia, Mireia B. Gonzalez, Kristjan Kalam, Miguel Zabala, Aivar Tarre, Kaupo Kukli, Aile Tamm, Francesca Campabadal, Juan Jimenez, Helena Castan, Salvador Duenas
Summary: This work observed the thickness-dependent resistive switching polarity in TiN/Ti/HfO2/Pt structures, and proposed a hypothesis on the change of polarity based on filament disruption at different interfaces.
Article
Nanoscience & Nanotechnology
Hyeok Jun Jin, Cheolmin Park, Hyo Hoon Byun, Seo Hak Park, Sung-Yool Choi
Summary: A multicolor imaging system using a two-dimensional van der Waals MoTe2/MoS2 heterostructure has been developed, achieving high responsivity within ultra-broadband for high-resolution photodetection. The system is capable of detecting and identifying target objects at visible-to-infrared wavelengths, with fast photoresponse time and unique cutoff wavelengths.
Article
Engineering, Electrical & Electronic
Jing Chen, Ping Li, Junqiang Zhu, Xiao-Ming Wu, Ran Liu, Jing Wan, Tian-Ling Ren
Summary: Transition metal dichalcogenides (TMDs) have outstanding physical and electrical properties, making them a promising platform for future electronic devices. MoTe2, with a bandgap close to silicon, shows potential for next-generation integrated circuits. By utilizing the ambipolar conduction property in MoTe2, high-quality polarity-controllable MoTe2 transistors (PCMTs) were successfully fabricated in our work, demonstrating their promise as building blocks for MoTe2 logic ICs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Multidisciplinary Sciences
Xiaolong Xu, Yu Pan, Shuai Liu, Bo Han, Pingfan Gu, Siheng Li, Wanjin Xu, Yuxuan Peng, Zheng Han, Ji Chen, Peng Gao, Yu Ye
Summary: The study presents a method for synthesizing wafer-scale single-crystalline 2H MoTe2 semiconductors on an amorphous insulating substrate, with excellent uniformity and 100% device yield. The 2D single-crystalline film can serve as a template for further rapid epitaxy in a vertical manner.
Article
Chemistry, Multidisciplinary
Hua Li, Honglei Li, Xingzhi Wang, Yufeng Nie, Cheng Liu, Yu Dai, Jinyang Ling, Mengning Ding, Xi Ling, Daiqian Xie, Ning Lu, Changjin Wan, Qihua Xiong, Weigao Xu
Summary: A spontaneous and stochastic polarity-flipping phenomenon has been discovered in monolayer WSe2, triggered by fluctuating carrier flows from or to the adjacent WS2 monolayer. This leads to switching between negative and positive correlations between the emission intensities of WS2 and WSe2 in the heterobilayer.
Article
Chemistry, Multidisciplinary
Xia Liu, Arnob Islam, Ning Yang, Bradley Odhner, Mary Anne Tupta, Jing Guo, Philip X-L Feng
Summary: The use of scanning laser annealing allows for the realization of 2D monolithic complementary logic circuits on atomically thin MoTe2, reliably designating p-type and n-type transport polarity through localized laser annealing and modification of Schottky contacts. This approach enables the construction of essential logic circuits such as inverters and NOR gates, with the potential for programmable functions in 2D semiconductors.
Article
Chemistry, Physical
Pratik Shinde, Pratap Mane, Dattatray J. Late, Brahmananda Chakraborty, Chandra Sekhar Rout
Summary: Hydrogen generation through water splitting is considered efficient in creating high-purity hydrogen. Two-dimensional materials have shown to be efficient electrocatalysts for the hydrogen evolution reaction.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Yang Yang, Hongxiang Zong, Jun Sun, Xiangdong Ding
Summary: Ripples are a class of native structural defects widely existing in 2D materials, and they have an impact on temperature-induced ferroic phase transition and stress-induced ferroic domain switching. Ripples stabilize short-range ferroic orders, increase transition temperature, and act as a source of dynamic random stress during domain switching.
ADVANCED MATERIALS
(2021)
Article
Materials Science, Multidisciplinary
Junchao Ma, Rodrigo A. Muniz, Shaomian Qi, Jiawei Lai, Kenan Zhang, Yinan Liu, Xiao Zhuo, Shuxia Chen, Jian-Hao Chen, Shuyun Zhou, Dong Sun
Summary: This study reports a clear experimental observation of in-plane CPGE in 1T'-MoTe2, which is found to be related to an in-plane internal DC electric field. The circular photogalvanic response is attributed to a third-order nonlinear optical effect involving this DC electric field, consistent with the crystal symmetry of the lattices in both the 1T' and T-d phases of the material.
Article
Materials Science, Multidisciplinary
Seong-Hyun Hwang, Seung-Hwan Kim, Seung-Geun Kim, Min-Su Kim, Kyu-Hyun Han, Sungjoo Song, Jong-Hyun Kim, Euyjin Park, Dong-Gyu Jin, Hyun-Yong Yu
Summary: Two-dimensional atomic threshold switching field-effect transistors (ATS-FETs), combining 2D FET with threshold switching (TS) devices, improve subthreshold swing (SS) for low-power devices. This study investigates V-th engineering for industrial application of 2D ATS-FET by altering the counter electrode (CE) of a TS device.
MATERIALS TODAY ADVANCES
(2023)
Article
Chemistry, Multidisciplinary
Daniel A. Rhodes, Apoorv Jindal, Noah F. Q. Yuan, Younghun Jung, Abhinandan Antony, Hua Wang, Bumho Kim, Yu-Che Chiu, Takashi Taniguchi, Kenji Watanabe, Katayun Barmak, Luis Balicas, Cory R. Dean, Xiaofeng Qian, Liang Fu, Abhay N. Pasupathy, James Hone
Summary: In semimetallic T-d-MoTe2, the superconductivity is dramatically enhanced with decreasing thickness, with a critical temperature (Tc) increasing up to 7.6 K for monolayers, showing a 60-fold increase compared to bulk Tc. The response to high in-plane magnetic fields is unique compared to other 2D superconductors, reflecting the canted spin texture of the electron pockets.
Review
Chemistry, Analytical
Md Ashfaque Hossain Khan, Mulpuri V. Rao, Qiliang Li
Article
Physics, Applied
Chen Shi, Asha Rani, Brian Thomson, Ratan Debnath, Abhishek Motayed, Dimitris E. Ioannou, Qiliang Li
APPLIED PHYSICS LETTERS
(2019)
Article
Nanoscience & Nanotechnology
Md Ashfaque Hossain Khan, Brian Thomson, Ratan Debnath, Asha Rani, Abhishek Motayed, Mulpuri Rao
Article
Nanoscience & Nanotechnology
Gheorghe Stan, Cristian V. Ciobanu, Sri Ranga Jai Likith, Asha Rani, Siyuan Zhang, Christina A. Hacker, Sergiy Krylyuk, Albert V. Davydov
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Engineering, Electrical & Electronic
Md Ashfaque Hossain Khan, Brian Thomson, Ratan Debnath, Abhishek Motayed, Mulpuri Rao
IEEE SENSORS JOURNAL
(2020)
Article
Engineering, Electrical & Electronic
Md Ashfaque Hossain Khan, Brian Thomson, Abhishek Motayed, Qiliang Li, Mulpuri Rao
IEEE SENSORS JOURNAL
(2020)
Review
Chemistry, Analytical
Md Ashfaque Hossain Khan, Mulpuri Rao
Article
Chemistry, Analytical
Md Ashfaque Hossain Khan, Brian Thomson, Jie Yu, Ratan Debnath, Abhishek Motayed, Mulpuri Rao
SENSORS AND ACTUATORS B-CHEMICAL
(2020)
Article
Engineering, Electrical & Electronic
Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri V. Rao
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2020)
Article
Engineering, Multidisciplinary
Md Ashfaque Hossain Khan, Abhishek Motayed, Mulpuri Rao
Summary: An array of sensors consisting of Ag and Pt incorporated ZnO, In2O3 and TiO2 coated GaN photoconductors was developed for accurate identification and quantification of gas mixtures. Artificial neural network models were analyzed and optimized for gas classification study, with back-propagation neural network identified as the optimal classifier. The developed sensor array in combination with NN algorithm was discussed for real-time gas monitoring applications.
MEASUREMENT SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Analytical
Md Ashfaque Hossain Khan, Ratan Debnath, Abhishek Motayed, Mulpuri Rao
Summary: A TiO2-coated GaN nanowire-based back-gate field-effect transistor (FET) device was designed to address the cross-sensitive nature of metal oxides, with a Si back gate and C-AlGaN gate dielectric as tunable parameters to enhance discrimination of gases. The results showed a significant increase in NO2 response with back-gate bias, while SO2 response increased insignificantly, explained by a band diagram based on density functional theory (DFT) molecular models.
Proceedings Paper
Engineering, Electrical & Electronic
Asha Rani, Shiqi Guo, Sergiy Krylyuk, Kyle DiCamillo, Ratan Debnath, Albert V. Davydov, Mona E. Zaghlou
2018 IEEE 13TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)
(2018)
