期刊
ADVANCED FUNCTIONAL MATERIALS
卷 30, 期 42, 页码 -出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202001688
关键词
graphene; heterostructures; memory; multibit; photoelectric memory; ReS2; two-dimensional materials
类别
资金
- World Premier International Center (WPI) for Materials Nanoarchitectonics (MANA) of the National Institute for Materials Science (NIMS), Tsukuba, Japan
- JSPS KAKENHI [17F17360]
- NIMS Nanofabrication Platform
- NIMS Molecule & Material Synthesis Platform in Nanotechnology Platform Project - Ministry of Education, Culture, Sports, Science, and Technology (MEXT), Japan
- Grants-in-Aid for Scientific Research [17F17360] Funding Source: KAKEN
Few-layer rhenium disulfide (ReS2) field-effect transistors with a local floating gate (FG) of monolayer graphene separated by a thin hexagonal boron nitride tunnel layer for application to a non-volatile memory (NVM) device are designed and investigated. FG-NVM devices based on two-dimensional van-der-Waals heterostructures have been recently studied as important components to realize digital electronics and multifunctional memory applications. Direct bandgap multilayer ReS(2)satisfies various requirements as a channel material for electronic devices as well as being a strong light-absorbing layer, which makes it possible to realize light-assisted optoelectronic applications. The NVM operation with a high ON/OFF current ratio, a large memory window, good endurance (>1000 cycles), and stable retention (>10(4)s) are observed. The successive program and erase states using 10 ms gate pulses of +10 V and -10 V are demonstrated, respectively. Laser pulses along with electrostatic gate pulses provide multibit level memory access via opto-electrostatic coupling. The devices exhibit the dual functionality of a conventional electronic memory and can store laser-pulse excited signal information for future all-optical logic and quantum information processing.
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