Tunable resistive switching of vertical ReSe2/graphene hetero-structure enabled by Schottky barrier height and DUV light

The development of the novel three-terminal hybrid lateral memristor and transistor device called memtransistor, has successfully provided additional functionalities in memory devices. However, their high operating voltage is critical. In this report, we have utilized the vertical heterojunction of Copper/Rhenium diselenide/Graphene to obtain low power gate tunable memristor. In such devices, resistive switching is governed by barrier height at the Rhenium diselenide/Graphene) interface, which controls the flow of electrons to neutralize Cu ions for the formation of the Cu filament. Therefore, barrier height is manipulated from similar to 60 meV at V-g = 90 V to similar to 828 meV at V-g = - 90 V by tuning the work function of the mono layer graphene with back-gate voltages. Subsequently, the tuning of barrier height ultimately modulates the operating voltage from 0.53 V to 3.67 V and R-on/R-off ratio from 10(2) to 10(5) by changing the V-g from 90 V to -90 V respectively. Moreover, the deep ultraviolet light assisted resistance switching effect is also investigated in gate-controlled Copper/Rhenium diselenide/Graphene devices. Thus, gate modulation and deep ultraviolet light irradiation make it compatible for future application in integrated optoelectronic systems. (C) 2020 Elsevier B.V. All rights reserved.

Automated summary

The development of novel memtransistors has introduced additional functionalities in memory devices, but their high operating voltage is a challenge. This report explores a low-power gate tunable memristor using a vertical heterojunction of Copper/Rhenium diselenide/Graphene, where resistive switching is controlled by the barrier height at the interface. By tuning the work function of graphene, the barrier height and operating voltage can be manipulated, demonstrating potential for future applications in integrated optoelectronic systems.