Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes
出版年份 2016 全文链接
标题
Role of substrate quality on the performance of semipolar (112¯2) InGaN light-emitting diodes
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 120, Issue 13, Pages 135701
出版商
AIP Publishing
发表日期
2016-10-05
DOI
10.1063/1.4963757
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
- (2016) M. J. Davies et al. APPLIED PHYSICS LETTERS
- Exciton localization in semipolar ( 112¯2) InGaN multiple quantum wells
- (2016) Duc V. Dinh et al. JOURNAL OF APPLIED PHYSICS
- Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes
- (2016) Wei Liu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Exciton localization in polar and semipolar (112̅2) In0.2Ga0.8N/GaN multiple quantum wells
- (2016) Duc V Dinh et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals
- (2015) S. Pimputkar et al. JOURNAL OF CRYSTAL GROWTH
- Semipolar (112―2) InGaN light-emitting diodes grown on chemically-mechanically polished GaN templates
- (2015) Duc V. Dinh et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Toward defect-free semi-polar GaN templates on pre-structured sapphire
- (2015) Yisong Han et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Semi-polar (112¯2)-GaN templates grown on 100 mm trench-patternedr-plane sapphire
- (2015) Frank Brunner et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- Fabrication of patterned sapphire substrate and effect of light emission pattern on package efficiency
- (2015) Xu-Fong Li et al. Optical Materials Express
- Development of GaN wafers via the ammonothermal method
- (2014) Edward Letts et al. JOURNAL OF CRYSTAL GROWTH
- Highly stable blue-emission in semipolar (11-22) InGaN/GaN multi-quantum well light-emitting diode
- (2013) Doo Soo Kim et al. APPLIED PHYSICS LETTERS
- Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
- (2013) Daniel F. Feezell et al. Journal of Display Technology
- Efficiency droop in light-emitting diodes: Challenges and countermeasures
- (2013) Jaehee Cho et al. Laser & Photonics Reviews
- Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
- (2013) Justin Iveland et al. PHYSICAL REVIEW LETTERS
- High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes
- (2012) Chih-Chien Pan et al. Applied Physics Express
- Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
- (2012) Han-Youl Ryu et al. APPLIED PHYSICS LETTERS
- Spatially resolved study of quantum efficiency droop in InGaN light-emitting diodes
- (2012) Yue Lin et al. APPLIED PHYSICS LETTERS
- Surface diffusion and layer morphology of ((112¯2)) GaN grown by metal-organic vapor phase epitaxy
- (2012) Simon Ploch et al. JOURNAL OF APPLIED PHYSICS
- Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
- (2012) Huining Wang et al. OPTICS EXPRESS
- Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate
- (2012) Narihito Okada et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Optical emission characteristics of semipolar (1\,1\,\bar{2}\,2) GaN light-emitting diodes grown on m-sapphire and stripe-etchedr-sapphire
- (2012) Benjamin Leung et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
- (2011) Po Shan Hsu et al. APPLIED PHYSICS LETTERS
- Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes
- (2011) Emmanouil Kioupakis et al. APPLIED PHYSICS LETTERS
- Electroluminescence enhancement of semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
- (2011) S.Y. Bae et al. CURRENT APPLIED PHYSICS
- Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE
- (2011) Kenji Fujito et al. MRS BULLETIN
- Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- (2010) Ching-Hsueh Chiu et al. Applied Physics Express
- Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN
- (2010) Feng Wu et al. APPLIED PHYSICS LETTERS
- Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes
- (2010) J. Hader et al. APPLIED PHYSICS LETTERS
- A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method
- (2010) I-Lin Lu et al. JOURNAL OF APPLIED PHYSICS
- White light emitting diodes with super-high luminous efficacy
- (2010) Yukio Narukawa et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Efficiency droop in nitride-based light-emitting diodes
- (2010) Joachim Piprek PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate
- (2009) Narihito Okada et al. Applied Physics Express
- Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities
- (2009) Q. Dai et al. APPLIED PHYSICS LETTERS
- Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
- (2009) Samantha C. Cruz et al. JOURNAL OF CRYSTAL GROWTH
- Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
- (2008) Hitoshi Sato et al. APPLIED PHYSICS LETTERS
- The role of dislocations as nonradiative recombination centers in InGaN quantum wells
- (2008) Josh Abell et al. APPLIED PHYSICS LETTERS
- Green light emitting diodes on a-plane GaN bulk substrates
- (2008) Theeradetch Detchprohm et al. APPLIED PHYSICS LETTERS
- Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
- (2008) Aurélien David et al. APPLIED PHYSICS LETTERS
- Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
- (2008) Haiyong Gao et al. JOURNAL OF APPLIED PHYSICS
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More