Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate
出版年份 2012 全文链接
标题
Green light-emitting diodes fabricated on semipolar (11-22) GaN on r-plane patterned sapphire substrate
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 209, Issue 3, Pages 469-472
出版商
Wiley
发表日期
2012-01-09
DOI
10.1002/pssa.201100385
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Growth Mechanism of Nonpolar and Semipolar GaN Layers from Sapphire Sidewalls on Various Maskless Patterned Sapphire Substrates
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- Reduction of Efficiency Droop in Semipolar (1\bar101) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
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- (2010) Tongtong Zhu et al. JOURNAL OF APPLIED PHYSICS
- White light emitting diodes with super-high luminous efficacy
- (2010) Yukio Narukawa et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Efficiency droop in nitride-based light-emitting diodes
- (2010) Joachim Piprek PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
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- m-Plane GaInN Light Emitting Diodes Grown on Patterneda-Plane Sapphire Substrates
- (2009) Yoshiki Saito et al. Applied Physics Express
- m-Plane GaN Films Grown on Patterneda-Plane Sapphire Substrates with 3-inch Diameter
- (2009) Koji Okuno et al. Applied Physics Express
- Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate
- (2009) Narihito Okada et al. Applied Physics Express
- Growth of GaN Layer and Characterization of Light-Emitting Diode Using Random-Cone Patterned Sapphire Substrate
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- Growth ofm-GaN layers by epitaxial lateral overgrowth from sapphire sidewalls
- (2009) Narihito Okada et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Direct Growth ofm-plane GaN with Epitaxial Lateral Overgrowth fromc-plane Sidewall ofa-plane Sapphire
- (2008) Narihito Okada et al. Applied Physics Express
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