Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

标题
Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting
作者
关键词
-
出版物
Journal of Display Technology
Volume 9, Issue 4, Pages 190-198
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2013-02-09
DOI
10.1109/jdt.2012.2227682

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