High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film

标题
High-luminous efficacy green light-emitting diodes with InGaN/GaN quasi-superlattice interlayer and Al-doped indium tin oxide film
作者
关键词
Green light-emitting diodes, InGaN/GaN quasi-superlattice, Al-doped ITO film, Luminous efficacy
出版物
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 794, Issue -, Pages 137-143
出版商
Elsevier BV
发表日期
2019-04-24
DOI
10.1016/j.jallcom.2019.04.241

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