In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures

出版年份 2015 全文链接

标题

作者

关键词

A1. Characterization, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B3. Light emitting diodes

出版物

Volume 415, Issue -, Pages 1-6

出版商

Elsevier BV

发表日期

2015-01-08

DOI

10.1016/j.jcrysgro.2014.12.023

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