Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method

标题
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
作者
关键词
-
出版物
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 23, Issue 12, Pages 125039
出版商
IOP Publishing
发表日期
2008-11-22
DOI
10.1088/0268-1242/23/12/125039

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