Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions

Effect of Si doping in barriers of InGaN/GaN multiple quantum wells on the performance of green light-emitting diodes

(2015) Zhiting Lin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

(2014) F. C.-P. Massabuau et al.   APPLIED PHYSICS LETTERS

Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells

(2014) Hideaki Murotani et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

The impact of gross well width fluctuations on the efficiency of GaN-based light emitting diodes

(2013) R. A. Oliver et al.   APPLIED PHYSICS LETTERS

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

(2013) M. J. Davies et al.   APPLIED PHYSICS LETTERS

Strain-induced defects as nonradiative recombination centers in green-emitting GaInN/GaN quantum well structures

(2013) Torsten Langer et al.   APPLIED PHYSICS LETTERS

Evaluation of the internal quantum efficiency in blue and green light-emitting diodes using the rate equation model

(2013) Han-Youl Ryu et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Bulk GaN based violet light-emitting diodes with high efficiency at very high current density

(2012) Michael J. Cich et al.   APPLIED PHYSICS LETTERS

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

(2012) S. Hammersley et al.   JOURNAL OF APPLIED PHYSICS

Quantitative and depth-resolved deep level defect distributions in InGaN/GaN light emitting diodes

(2012) A. Armstrong et al.   OPTICS EXPRESS

Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies

(2011) Emre Gür et al.   APPLIED PHYSICS LETTERS

Hybrid functional calculations of native point defects in InN

(2011) A. Janotti et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

It's not easy being green: Strategies for all-nitrides, all-colour solid state lighting

(2011) K. P. O'Donnell et al.   Physica Status Solidi-Rapid Research Letters

Quantitative and Depth-Resolved Investigation of Deep-Level Defects in InGaN/GaN Heterostructures

(2010) A. Armstrong et al.   JOURNAL OF ELECTRONIC MATERIALS

On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

(2009) Martin F. Schubert et al.   APPLIED PHYSICS LETTERS

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

First principles studies on In-related nitride semiconductors

(2009) Teruaki Obata et al.   JOURNAL OF CRYSTAL GROWTH