Sub-5 nm Gate Length Monolayer MoTe2 Transistors

Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors

(2021) Qiuhui Li et al.   Advanced Theory and Simulations

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

(2021) Yangyang Wang et al.   REPORTS ON PROGRESS IN PHYSICS

Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe2

(2021) Xiaolong Xu et al.   SCIENCE

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

(2020) Wenhan Zhou et al.   Advanced Electronic Materials

Performance Limit of Monolayer WSe2 Transistors; Significantly Outperform Their MoS2 Counterpart

(2020) Xiaotian Sun et al.   ACS Applied Materials & Interfaces

Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

(2020) Khalil Tamersit   AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

Designing sub-10-nm Metal-Oxide-Semiconductor Field-Effect Transistors via Ballistic Transport and Disparate Effective Mass: The Case of Two-Dimensional BiN

(2020) Wenhan Zhou et al.   Physical Review Applied

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

(2020) Yuanyuan Pan et al.   Physical Review Applied

Sub 10 nm Bilayer Bi 2 O 2 Se Transistors

(2019) Jie Yang et al.   Advanced Electronic Materials

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

(2019) Jiahuan Yan et al.   Advanced Electronic Materials

QuantumATK: an integrated platform of electronic and atomic-scale modelling tools

(2019) Søren Smidstrup et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

(2019) M.W. Iqbal et al.   SUPERLATTICES AND MICROSTRUCTURES

Evaporated tellurium thin films for p-type field-effect transistors and circuits

(2019) Chunsong Zhao et al.   Nature Nanotechnology

Many-Body Effect and Device Performance Limit of Monolayer InSe

(2018) Yangyang Wang et al.   ACS Applied Materials & Interfaces

First-Principles Simulations of FETs Based on Two-Dimensional InSe

(2018) Enrique G. Marin et al.   IEEE ELECTRON DEVICE LETTERS

Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors

(2018) Benjamin Sirota et al.   Scientific Reports

Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

(2018) Ruge Quhe et al.   Physical Review Applied

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

(2017) Chenguang Qiu et al.   SCIENCE

Atomistic Simulations of Device Physics in Monolayer Transition Metal Dichalcogenide Tunneling Transistors

(2016) Fei Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Indirect-to-Direct Band Gap Crossover in Few-Layer Transition Metal Dichalcogenides: A Theoretical Prediction

(2016) Yajing Sun et al.   Journal of Physical Chemistry C

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures

(2016) Chenxi Zhang et al.   2D Materials

Two-dimensional semiconductors for transistors

(2016) Manish Chhowalla et al.   Nature Reviews Materials

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

(2016) Hongxia Zhong et al.   Scientific Reports

Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications

(2016) Youwei Zhang et al.   Scientific Reports

2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

(2015) Wei Cao et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phase patterning for ohmic homojunction contact in MoTe2

(2015) S. Cho et al.   SCIENCE

Exfoliated multilayer MoTe2 field-effect transistors

(2014) S. Fathipour et al.   APPLIED PHYSICS LETTERS

Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

(2014) Jiwon Chang et al.   JOURNAL OF APPLIED PHYSICS

Optical Properties and Band Gap of Single- and Few-Layer MoTe2 Crystals

(2014) Claudia Ruppert et al.   NANO LETTERS

Device Performance of Heterojunction Tunneling Field-Effect Transistors Based on Transition Metal Dichalcogenide Monolayer

(2013) Kai-Tak Lam et al.   IEEE ELECTRON DEVICE LETTERS

On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

(2013) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electron-Electron Interactions in Graphene: Current Status and Perspectives

(2012) Valeri N. Kotov et al.   REVIEWS OF MODERN PHYSICS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology